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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation 低能电子束辐照氮化镓中Mg受体活化的机制
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-07-01 DOI: 10.1109/COMMAD.2010.5699705
T. Manning, T. Hardy, M. Merklein, M. Wintrebert-Fouquet, M. Phillips
{"title":"A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation","authors":"T. Manning, T. Hardy, M. Merklein, M. Wintrebert-Fouquet, M. Phillips","doi":"10.1109/COMMAD.2010.5699705","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699705","url":null,"abstract":"Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (∼77 K).","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129191484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Large format HgCdTe focal plane arrays for dual-band long-wavelength infrared detection 用于双波段长波红外探测的大画幅HgCdTe焦平面阵列
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2009-05-01 DOI: 10.1117/12.818175
E. Smith, A. Gallagher, G. Venzor, J. Peterson, M. Reddy, D. Lofgreen, E. Patten, W. Radford
{"title":"Large format HgCdTe focal plane arrays for dual-band long-wavelength infrared detection","authors":"E. Smith, A. Gallagher, G. Venzor, J. Peterson, M. Reddy, D. Lofgreen, E. Patten, W. Radford","doi":"10.1117/12.818175","DOIUrl":"https://doi.org/10.1117/12.818175","url":null,"abstract":"Raytheon Visions Systems (RVS) is furthering its capability to deliver state-of-the-art high performance large format HgCdTe focal plane arrays (FPAs) for dual-band long-wavelength infrared (LWIR) detection.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130311535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A novel self-mixing sensor architecture using a PLL for noise immunity 一种采用锁相环抗噪的新型自混合传感器结构
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2010.5699800
Ezra Zigenbine, R. Kliese, K. Bertling, A. Rakić
{"title":"A novel self-mixing sensor architecture using a PLL for noise immunity","authors":"Ezra Zigenbine, R. Kliese, K. Bertling, A. Rakić","doi":"10.1109/COMMAD.2010.5699800","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699800","url":null,"abstract":"The accuracy and maximum range of a self-mixing laser range finder are limited by the SNR of the self-mixing signal. In this work we have proposed a PLL sweep technique that was demonstrated to dramatically improve the noise immunity of a self-mixing range finder. It allowed operation with a non-cooperative target over a range of 200–900 mm and improved the self-mixing SNR by more than 20 dB.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121028778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-mixing interferometry with a terahertz Quantum Cascade Laser: Feedback induced voltage signal 太赫兹量子级联激光器的自混合干涉测量:反馈感应电压信号
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2010.5699686
Y. Lim, P. Dean, S. Khanna, M. Lachab, R. Kliese, M. Nikolić, D. Indjin, P. Harrison, E. Linfield, A. Davies, A. Rakić
{"title":"Self-mixing interferometry with a terahertz Quantum Cascade Laser: Feedback induced voltage signal","authors":"Y. Lim, P. Dean, S. Khanna, M. Lachab, R. Kliese, M. Nikolić, D. Indjin, P. Harrison, E. Linfield, A. Davies, A. Rakić","doi":"10.1109/COMMAD.2010.5699686","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699686","url":null,"abstract":"We report here a compact and efficient sensing technique that utilises the self-mixing effect in terahertz Quantum Cascade Lasers (QCLs). A terahertz QCL is used both for the emission and the detection of light. Sensors based on this technique promise high sensitivity, simplicity of optical design and the potential for implementation in monolithic arrays.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128411611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio 金催化InP纳米线:生长温度和V/III比的影响
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2010.5699767
S. Paiman, Q. Gao, H. Joyce, H. Tan, C. Jagadish, Y. Kim, Y. Guo, J. Zou
{"title":"Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio","authors":"S. Paiman, Q. Gao, H. Joyce, H. Tan, C. Jagadish, Y. Kim, Y. Guo, J. Zou","doi":"10.1109/COMMAD.2010.5699767","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699767","url":null,"abstract":"Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400–510 °C and V/III ratio of 44–700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114198059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Free space optical transmission of FM audio/video signals using InGaAs modulating retro-reflectors 利用InGaAs调制后向反射器实现调频音视频信号的自由空间光传输
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/commad.2010.5699757
K. Grant, B. Clare, W. Martinsen, K. Mudge, H. Burris, C. Moore, J. Overfield, G. C. Gilbreath, W. Rabinovich
{"title":"Free space optical transmission of FM audio/video signals using InGaAs modulating retro-reflectors","authors":"K. Grant, B. Clare, W. Martinsen, K. Mudge, H. Burris, C. Moore, J. Overfield, G. C. Gilbreath, W. Rabinovich","doi":"10.1109/commad.2010.5699757","DOIUrl":"https://doi.org/10.1109/commad.2010.5699757","url":null,"abstract":"We report on the free space optical transmission of FM audio/video signals using a 6.3mm diameter InGaAs modulating retro-reflector.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117135494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth of ZnS heterostructures for optoelectronic applications 光电应用中ZnS异质结构的生长
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2010.5699747
Z. Chen, J. Zou, G. Lu
{"title":"Growth of ZnS heterostructures for optoelectronic applications","authors":"Z. Chen, J. Zou, G. Lu","doi":"10.1109/COMMAD.2010.5699747","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699747","url":null,"abstract":"The growth mechanism and cathodoluminescence of dual phase ZnS tetrapod tree-like heterostructures with the zinc blende structured trunks and the hexagonal wurtzite structured branches were prepared and characterised. The polarity induced growth of tetrapod ZnS trees was confirmed by advanced electron microscopy. Two strong UV emissions (centred at 3.68 and 3.83 eV) have been observed at room temperature, which are attributed to the bandgap emissions from the zinc blende structured trunks and hexagonal wurtzite structured branches, indicating that such heterostructures can be used as unique electromechanical and optoelectronic components in laser and light emitting display devices.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123893460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates Si衬底上生长的垂直GaAs/GaP核壳纳米线的结构和光学特性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2010.5699778
Jung-Hyun Kang, Q. Gao, H. Joyce, Y. Kim, Yanan Guo, Hong-yi Xu, J. Zou, M. Fickenscher, Leigh Morris Smith, H. Jackson, J. Yarrison-Rice, H. Tan, C. Jagadish
{"title":"Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates","authors":"Jung-Hyun Kang, Q. Gao, H. Joyce, Y. Kim, Yanan Guo, Hong-yi Xu, J. Zou, M. Fickenscher, Leigh Morris Smith, H. Jackson, J. Yarrison-Rice, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699778","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699778","url":null,"abstract":"GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134214852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ge11.5As24Se64.5 chalcogenide glass nanowires with a nonlinear parameter of 136,000W−1km−1 at 1550nm Ge11.5As24Se64.5硫系玻璃纳米线，在1550nm处非线性参数为136,000W−1km−1
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/commad.2010.5699755
X. Gai, D. Choi, S. Madden, D. Bulla, B. Luther-Davies
{"title":"Ge11.5As24Se64.5 chalcogenide glass nanowires with a nonlinear parameter of 136,000W−1km−1 at 1550nm","authors":"X. Gai, D. Choi, S. Madden, D. Bulla, B. Luther-Davies","doi":"10.1109/commad.2010.5699755","DOIUrl":"https://doi.org/10.1109/commad.2010.5699755","url":null,"abstract":"We have fabricated nanowires from Ge<inf>11.5</inf>As<inf>24</inf>Se<inf>64.5</inf> glass. The loss of nanowire was measured to be 2.6dB/cm for fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136±7W<sup>−1</sup>m<sup>−1</sup> at 1550nm. Supercontinuum (SC) was produced in an 18mm long nanowire.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132124704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison between implanted boron and phosphorus in silicon wafers. 硅片中注入硼磷的比较。
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2010.5699752
J. E. Burgess, B. C. Johnson, B. Villis, J. McCallum, S. Charnvanichborikarn, J. Wong-Leung, J. Williams
{"title":"Comparison between implanted boron and phosphorus in silicon wafers.","authors":"J. E. Burgess, B. C. Johnson, B. Villis, J. McCallum, S. Charnvanichborikarn, J. Wong-Leung, J. Williams","doi":"10.1109/COMMAD.2010.5699752","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699752","url":null,"abstract":"The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132311171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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