Comparison between implanted boron and phosphorus in silicon wafers.

J. E. Burgess, B. C. Johnson, B. Villis, J. McCallum, S. Charnvanichborikarn, J. Wong-Leung, J. Williams
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引用次数: 1

Abstract

The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.
硅片中注入硼磷的比较。
研究了离子注入制备的硅自间隙体的光致发光特性。已经使用了一系列退火温度来跟踪这些缺陷的演变。考虑了掺杂B和P对这些缺陷形成的影响。正如预期的那样,硼降低了w线。磷也降低发光,但程度较轻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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