Jung-Hyun Kang, Q. Gao, H. Joyce, Y. Kim, Yanan Guo, Hong-yi Xu, J. Zou, M. Fickenscher, Leigh Morris Smith, H. Jackson, J. Yarrison-Rice, H. Tan, C. Jagadish
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Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
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