低能电子束辐照氮化镓中Mg受体活化的机制

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-07-01 DOI:10.1109/COMMAD.2010.5699705

T. Manning, T. Hardy, M. Merklein, M. Wintrebert-Fouquet, M. Phillips

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引用次数: 2

摘要

低能电子束辐照(LEEBI)淬灭了碳(80 K时3.28 eV的CN)的供体-受体对(DAP)，并增强了3.27 eV峰的发射，这是由于300 K时自由束缚(e,Mg0)跃迁所致。这导致在室温下阴极发光(CL)发射增加，而在液氮温度(~ 77 K)下CL发射减少。

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A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (∼77 K).

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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