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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Deep-level transient spectroscopy study of channelled boron implantation in silicon. 硅中通道硼注入的深能级瞬态光谱研究。
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699715
L. Deam, Brett C. Johnson, Jeffrey C. McCallum
{"title":"Deep-level transient spectroscopy study of channelled boron implantation in silicon.","authors":"L. Deam, Brett C. Johnson, Jeffrey C. McCallum","doi":"10.1109/COMMAD.2010.5699715","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699715","url":null,"abstract":"Boron ions will be implanted at 150 keV down the <100> axis of n-type silicon. Deep-level transient spectroscopy will be used to study the range, concentration and species of the created defects. A comparison to crystal-TRIM results will be made in order to refine model parameters.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115741963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium 非晶锗固相外延再生制备锗化镍
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699719
B. C. Johnson, M. Leong, S. Kandasamy, A. Holland, J. McCallum
{"title":"Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium","authors":"B. C. Johnson, M. Leong, S. Kandasamy, A. Holland, J. McCallum","doi":"10.1109/COMMAD.2010.5699719","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699719","url":null,"abstract":"The effect of Ni on the kinetics of solid phase epitaxial re-crystallization of amorphous germanium films is investigated with Raman spectroscopy. Both Ni implantation and deposition are employed.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124831739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low level optical feedback in semiconductor lasers as a tool to identify nonlinear enhancement of device noise 半导体激光器中的低电平光反馈作为识别器件噪声非线性增强的工具
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699776
J. Toomey, D. Kane
{"title":"Low level optical feedback in semiconductor lasers as a tool to identify nonlinear enhancement of device noise","authors":"J. Toomey, D. Kane","doi":"10.1109/COMMAD.2010.5699776","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699776","url":null,"abstract":"Recent studies of nonlinear dynamics in semiconductor-laser-with-optical-feedback (SLwOF) systems have discovered that very low levels of optical feedback enhance several, specific, narrow frequency bands within the broad bandwidth of the noise of the free running laser, in a systematic way as the injection current is increased [1]. Similar frequency features are also extracted when completing instantaneous frequency measurement (IFM) on the real-time output power data from semiconductor lasers operated at low injection current [2]. We report further investigation of the nonlinear behaviour of these noise peaks in a SLwOF system and their relevance as driving frequencies in the nonlinear dynamics of the SLwOF systems. The significance of this nonlinear noise measurement to device specification is also evaluated.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131939073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimental and theoretical study of thermal effects on the dynamical hysteresis in VCSEL turn-on and turn -off 热效应对VCSEL开关动迟滞的实验与理论研究
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699777
Y. Hong, C. Masoller, M. Torre, S. Priyadarshi, A. Qader, P. Spencer, K. Shore
{"title":"Experimental and theoretical study of thermal effects on the dynamical hysteresis in VCSEL turn-on and turn -off","authors":"Y. Hong, C. Masoller, M. Torre, S. Priyadarshi, A. Qader, P. Spencer, K. Shore","doi":"10.1109/COMMAD.2010.5699777","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699777","url":null,"abstract":"Thermal effects on the dynamical hysteresis in VCSEL turn-on and turn-off has been studied experimentally and theoretically. Both normal hysteresis and negative hysteresis are observed in VCSEL turn-on and turn-off.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126425328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterization of integrated field emission diodes using self-assembled-silicon-nanostructure cathodes 自组装硅纳米结构阴极集成场发射二极管的制备与表征
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699753
M. Bari, S. Lansley, R. Blaikie, F. Fang, Andreas Markwitz
{"title":"Fabrication and characterization of integrated field emission diodes using self-assembled-silicon-nanostructure cathodes","authors":"M. Bari, S. Lansley, R. Blaikie, F. Fang, Andreas Markwitz","doi":"10.1109/COMMAD.2010.5699753","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699753","url":null,"abstract":"CMOS process compatible integrated diodes using self-assembledsilicon-nanostructure cathodes have been fabricated and characterized at atmospheric pressure. The silicon nanostructures are atomically sharp and about 10 nm high, self-assembled on a silicon substrate by electron beam annealing (EBA). The electrical conduction characteristics of the devices show Fowler-Nordheim field emission at high fields. A field enhancement factor, β, of about 5×10<sup>5</sup> cm<sup>−1</sup> and silicon effective work function, Ф<inf>eff</inf>, of about 0.21 eV are reported for the devices.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"124 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125022401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterisation and device applications of ZnxMg1−xO films grown by pulsed laser deposition 脉冲激光沉积ZnxMg1−xO薄膜的表征及器件应用
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699790
J. Partridge, D. Kim, R. Heinhold, M. Field, S. M. Durbin, R. Reeves, M. Allen
{"title":"Characterisation and device applications of ZnxMg1−xO films grown by pulsed laser deposition","authors":"J. Partridge, D. Kim, R. Heinhold, M. Field, S. M. Durbin, R. Reeves, M. Allen","doi":"10.1109/COMMAD.2010.5699790","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699790","url":null,"abstract":"Zn<inf>x</inf>Mg<inf>1−x</inf>O films have been deposited using pulsed laser deposition (PLD) onto a-plane sapphire substrates and incorporated into ultraviolet sensors based on IrO/ Zn<inf>x</inf>Mg<inf>1−x</inf>O Schottky barrier contacts. Electron diffraction showed that the films were highly crystalline with low surface roughness. Atomic force micros-copy showed this roughness to be &#60;2% of the film thickness. The IrO<inf>x</inf>/Zn<inf>x</inf>Mg<inf>1−x</inf>O Schottky devices exhibited good rectification (barrier heights ∼0.88 eV and ideality factors ∼1.7) and UV sensing capability.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125903386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Periodic nanowire structures 周期纳米线结构
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699764
E. Bakkers, R. Algra, M. Hocevar, M. Borgstrom, G. Immink, B. Ketelaars, L. Feiner, W. V. van Enckevort, E. Vlieg, M. Verheijen
{"title":"Periodic nanowire structures","authors":"E. Bakkers, R. Algra, M. Hocevar, M. Borgstrom, G. Immink, B. Ketelaars, L. Feiner, W. V. van Enckevort, E. Vlieg, M. Verheijen","doi":"10.1109/COMMAD.2010.5699764","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699764","url":null,"abstract":"We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121853748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The role of ultrafast torsional relaxation in the emission from polythiophene aggregates 超快扭转弛豫在聚噻吩聚集体发射中的作用
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-09-07 DOI: 10.1021/jz101026g
Patrick Parkinson, Christian Müller, Natalie Stingelin, M. B. Johnston, L. Herz
{"title":"The role of ultrafast torsional relaxation in the emission from polythiophene aggregates","authors":"Patrick Parkinson, Christian Müller, Natalie Stingelin, M. B. Johnston, L. Herz","doi":"10.1021/jz101026g","DOIUrl":"https://doi.org/10.1021/jz101026g","url":null,"abstract":"An understanding of aggregation effects in organic semiconductors is essential for their effective use in optoelectronic devices. Typically, the electronic dynamics in such systems are heavily dependant upon the aggregation state, and dynamics often occur on sub-nanosecond timescales.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116069334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 94
Photoluminescence study of optically trapped InP semiconductor nanowires 光捕获InP半导体纳米线的光致发光研究
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-08-19 DOI: 10.1117/12.860236
Fan Wang, W. J. Toe, S. Paiman, Q. Gao, H. Tan, C. Jagadish, P. Reece
{"title":"Photoluminescence study of optically trapped InP semiconductor nanowires","authors":"Fan Wang, W. J. Toe, S. Paiman, Q. Gao, H. Tan, C. Jagadish, P. Reece","doi":"10.1117/12.860236","DOIUrl":"https://doi.org/10.1117/12.860236","url":null,"abstract":"We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 µm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134358406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells ZnO/ZnMgO量子阱中载流子动力学及量子受限stark效应的影响
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-07-18 DOI: 10.1109/COMMAD.2010.5699771
C. Hall, L. Dao, K. Koike, S. Sasa, H. Tan, M. Inoue, M. Yano, C. Jagadish, J.A. Davis
{"title":"Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells","authors":"C. Hall, L. Dao, K. Koike, S. Sasa, H. Tan, M. Inoue, M. Yano, C. Jagadish, J.A. Davis","doi":"10.1109/COMMAD.2010.5699771","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699771","url":null,"abstract":"We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117242810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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