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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Inkjet printed conducting gel-carbon nanotube materials 喷墨打印导电凝胶-碳纳米管材料
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699707
A. Aldalbahi, M. in het Panhuis
{"title":"Inkjet printed conducting gel-carbon nanotube materials","authors":"A. Aldalbahi, M. in het Panhuis","doi":"10.1109/COMMAD.2010.5699707","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699707","url":null,"abstract":"The inkjet printing of CNT-biopolymer composite inks onto solid and gel substrates was investigated. Changing the substrate from glass to gel resulted in an increase in the resistance of printed materials from 9.85 kΩ/cm to 39.42 kΩ/cm.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127015736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication of III–V semiconductor core-shell nanowires by SA-MOVPE and their device applications SA-MOVPE制备III-V型半导体芯壳纳米线及其器件应用
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699743
T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa
{"title":"Fabrication of III–V semiconductor core-shell nanowires by SA-MOVPE and their device applications","authors":"T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa","doi":"10.1109/COMMAD.2010.5699743","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699743","url":null,"abstract":"We fabricated various kinds of III–V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III–V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. We also demonstrate III–V semiconductor nano-wires grown on Si (111) substrates.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114260505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Co and Co-Pt nanoparticles formed in silica by ion implantation 离子注入在二氧化硅中形成Co和Co- pt纳米颗粒
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699724
A. Malik, K. Belay, D. Llewellyn, W. Hutchison, K. Nishmura, R. Elliman
{"title":"Co and Co-Pt nanoparticles formed in silica by ion implantation","authors":"A. Malik, K. Belay, D. Llewellyn, W. Hutchison, K. Nishmura, R. Elliman","doi":"10.1109/COMMAD.2010.5699724","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699724","url":null,"abstract":"Nanoparticles of metallic cobalt and cobalt-platinum alloy have been synthesised via ion implantation and thermal annealing. The size and spatial distributions of the resulting nanoparticles were investigated as a function of annealing temperature, for temperatures up to 900°C, and correlated with their magnetic properties.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131688038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of sputtering substrate temperature and high temperature annealing methods on the properties of SRO/SiO2 superlattices 溅射衬底温度和高温退火方法对SRO/SiO2超晶格性能的影响
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699711
C. Chen, X. Hao, M. Green
{"title":"Influence of sputtering substrate temperature and high temperature annealing methods on the properties of SRO/SiO2 superlattices","authors":"C. Chen, X. Hao, M. Green","doi":"10.1109/COMMAD.2010.5699711","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699711","url":null,"abstract":"P-doped silicon rich oxide (SRO) /silicon dioxide (SiO2) superlattices, deposited by sputtering method under different substrate temperatures, were treated using conventional furnace annealing or rapid thermal annealing (RTA). Raman and X-ray diffraction (XRD) were used to characterize the samples. Results show larger nanocrystal size is formed by furnace annealing than by RTA. High crystallinity can be achieved by increasing substrate temperature and using furnace annealing.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132121143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics 溶胶-凝胶加工的高性能金属氧化物薄膜晶体管，用于低成本和透明电子产品
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699733
Birendra Singh, J. Jasieniak, M. Bown
{"title":"Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics","authors":"Birendra Singh, J. Jasieniak, M. Bown","doi":"10.1109/COMMAD.2010.5699733","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699733","url":null,"abstract":"We report on the use of sol-gel-processed amorphous oxides based on a (Zn<inf>x</inf>Sn<inf>y</inf>)O<inf>z</inf> composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm<sup>2</sup>/Vs and high on/off ratios (>10<sup>6</sup>). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129591435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method 用锌扩散法自旋镀膜制备p-n结GaSb的电性能
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699729
A. H. Ramelan, E. Goldys, P. Arifin
{"title":"Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method","authors":"A. H. Ramelan, E. Goldys, P. Arifin","doi":"10.1109/COMMAD.2010.5699729","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699729","url":null,"abstract":"The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130032008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective enhancement of photon emission in a quantum dot coupling with micropillar cavity 量子点耦合微柱腔中光子发射的选择性增强
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699785
Jian Lu, Q. Ren, H. Tan, Shan Wu, Z. An, Saifeng Zhang, Yongyuan Zhu, Zhanghai Chen, C. Jagadish, Xue-chu Shen
{"title":"Selective enhancement of photon emission in a quantum dot coupling with micropillar cavity","authors":"Jian Lu, Q. Ren, H. Tan, Shan Wu, Z. An, Saifeng Zhang, Yongyuan Zhu, Zhanghai Chen, C. Jagadish, Xue-chu Shen","doi":"10.1109/COMMAD.2010.5699785","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699785","url":null,"abstract":"We present the magneto-optical investigation of coupling between single exciton spin state of an InGaAs QD and a high quality micropillar cavity. Due to Purcell effect, we realize the selective enhancement of spin polarized photon emission from a single quantum dot-micropillar cavity system by tuning external magnetic field.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130667961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced germanium devices: The development of materials and processing 先进锗器件:材料的开发与加工
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699722
M. Leong, B. C. Johnson, S. Kandasamy, A. Holland, H. Gamble, M. Armstrong, T. Perova, D. W. McNeil, S. Rubanov, J. McCallum
{"title":"Advanced germanium devices: The development of materials and processing","authors":"M. Leong, B. C. Johnson, S. Kandasamy, A. Holland, H. Gamble, M. Armstrong, T. Perova, D. W. McNeil, S. Rubanov, J. McCallum","doi":"10.1109/COMMAD.2010.5699722","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699722","url":null,"abstract":"The development and optimisation of materials and processes used for germanium metal-oxide-semiconductor devices are investigated. The gate oxide and the source-drain are examined using electrical and optical techniques.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130696422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Can insulating the gates lead us to stable modulation-doped hole quantum devices? 绝缘栅极能使我们得到稳定的调制掺杂空穴量子器件吗?
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699738
D. Waddington, A. Burke, S. Fricke, H. Tan, C. Jagadish, A. Hamilton, K. Trunov, D. Reuter, A. Wieck, A. Micolich
{"title":"Can insulating the gates lead us to stable modulation-doped hole quantum devices?","authors":"D. Waddington, A. Burke, S. Fricke, H. Tan, C. Jagadish, A. Hamilton, K. Trunov, D. Reuter, A. Wieck, A. Micolich","doi":"10.1109/COMMAD.2010.5699738","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699738","url":null,"abstract":"We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of comparative studies of devices made with and without oxide-insulated gates to establish whether this leads to a significant enhancement in device stability and reduced gate hysteresis and noise.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Instabilities in semiconductor laser with optical feedback and modulation 具有光反馈和调制的半导体激光器的不稳定性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699796
J. Toomey, D. Kane, M. W. Lee, K. Shore
{"title":"Instabilities in semiconductor laser with optical feedback and modulation","authors":"J. Toomey, D. Kane, M. W. Lee, K. Shore","doi":"10.1109/COMMAD.2010.5699796","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699796","url":null,"abstract":"A recent investigation into the operation of a semiconductor laser with optical feedback and direct current modulation has revealed in detail the different dynamical states displayed by the system [1]. The dynamics are driven by the main frequencies in the system; the external cavity frequency, the injection current modulation frequency and relaxation oscillation frequency. Varying optical feedback level, as well as the power and frequency of the injection current modulation resulted in the laser system displaying a variety of dynamics ranging from stable, periodic signals to unstable, chaotic outputs.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115632677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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