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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Flexible fishnet metamaterial on PDMS substrate for THz frequencies 太赫兹频率下PDMS基板上的柔性鱼网超材料
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699760
I. Khodasevych, C. Shah, W. Rowe, A. Mitchell
{"title":"Flexible fishnet metamaterial on PDMS substrate for THz frequencies","authors":"I. Khodasevych, C. Shah, W. Rowe, A. Mitchell","doi":"10.1109/COMMAD.2010.5699760","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699760","url":null,"abstract":"We present the design of a flexible fishnet metamaterial on a PDMS substrate operating at terahertz (THz) frequencies. The low-cost, flexibility and low-surface energy of PDMS enables a range of possible sensing applications.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122258748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanoimprint induced electrical type conversion in HgCdTe 纳米压印诱导HgCdTe的电型转换
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699723
M. Martyniuk, G. Umana-Membreno, R. Sewell, R. Westerhout, C. Musca, J. Dell, J. Antoszewski, L. Faraone, D. Macintyre, S. Thoms, C. Ironside
{"title":"Nanoimprint induced electrical type conversion in HgCdTe","authors":"M. Martyniuk, G. Umana-Membreno, R. Sewell, R. Westerhout, C. Musca, J. Dell, J. Antoszewski, L. Faraone, D. Macintyre, S. Thoms, C. Ironside","doi":"10.1109/COMMAD.2010.5699723","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699723","url":null,"abstract":"We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120933118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of GaN-based light-emitting diodes with enhanced lateral light extraction 具有增强侧向光提取的氮化镓基发光二极管的设计
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699780
Hyunsoo Kim, Seongjun Kim, Youngjun Park
{"title":"Design of GaN-based light-emitting diodes with enhanced lateral light extraction","authors":"Hyunsoo Kim, Seongjun Kim, Youngjun Park","doi":"10.1109/COMMAD.2010.5699780","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699780","url":null,"abstract":"We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.1 Based on Snell's law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129533487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of low loss Chalcogenide glass waveguide via thermal nanoimprint lithography 热纳米压印技术制备低损耗硫系玻璃波导
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699775
T. Han, S. Madden, D. Bulla, B. Luther-Davies
{"title":"Fabrication of low loss Chalcogenide glass waveguide via thermal nanoimprint lithography","authors":"T. Han, S. Madden, D. Bulla, B. Luther-Davies","doi":"10.1109/COMMAD.2010.5699775","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699775","url":null,"abstract":"We report the fabrication of Chalcogenide glass rib waveguides by thermal nano-imprint. Waveguides 2–4µm wide and 1µm high were fabricated with optical losses of 0.26dB/cm and 0.27dB/cm for TM and TE polarizations at 1550nm.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134279047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Imaging periodic scarred states in InAs open quantum dots: Evidence of quantum darwinism 在InAs开放量子点中成像周期性伤痕状态:量子达尔文主义的证据
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699681
A. Burke, R. Akis, T. Day, G. Speyer, B. R. Bennett, D. Ferry
{"title":"Imaging periodic scarred states in InAs open quantum dots: Evidence of quantum darwinism","authors":"A. Burke, R. Akis, T. Day, G. Speyer, B. R. Bennett, D. Ferry","doi":"10.1109/COMMAD.2010.5699681","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699681","url":null,"abstract":"Scanning gate microscopy (SGM) is used to image scar structures in an InAs open quantum dot, which is defined via electron beam lithography and wet etching. Periodicities in magnetic field are found within the scanned images and correlate to those observed in the conductance fluctuations. Simulations have shown that these magnetic transform images show striking resemblance to actual scars found in the dot that replicate through the conductance modes in direct agreement with the theory of quantum Darwinism.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127354743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterisation of an induced ambipolar device on AlGaAs/GaAs Heterostructures AlGaAs/GaAs异质结构诱导双极性器件的制备与表征
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699713
J. Chen, O. Klochan, A. Micolich, A. Hamilton, K. Das Gupta, F. Sfigakis, D. Ritchie, K. Trunov, D. Reuter, A. Wieck
{"title":"Fabrication and characterisation of an induced ambipolar device on AlGaAs/GaAs Heterostructures","authors":"J. Chen, O. Klochan, A. Micolich, A. Hamilton, K. Das Gupta, F. Sfigakis, D. Ritchie, K. Trunov, D. Reuter, A. Wieck","doi":"10.1109/COMMAD.2010.5699713","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699713","url":null,"abstract":"In this study a metal-insulator semiconductor field effect transistor (MISFET) was fabricated on an undoped (100)-oriented AlGaAs/GaAs heterostructure. This device has the ability to switch the charge carriers in the conduction channel between electrons and holes by switching the sign of the applied top gate voltage. The device was characterised at 0.3K and electron/hole transport measurements were conducted. In the future these devices could potentially be used as lateral p-i-n junctions for fabrication of low dimensional electroluminescent devices.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131576924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of site-controlled InAs/InP quantum dots and their integration into planar structures 位控InAs/InP量子点的形成及其在平面结构中的集成
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699798
H. Wang, J. Yuan, P. J. van Veldhoven, P. N. T. de Vries, E. Smalbrugge, E. J. Geluk, R. Notzel
{"title":"Formation of site-controlled InAs/InP quantum dots and their integration into planar structures","authors":"H. Wang, J. Yuan, P. J. van Veldhoven, P. N. T. de Vries, E. Smalbrugge, E. J. Geluk, R. Notzel","doi":"10.1109/COMMAD.2010.5699798","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699798","url":null,"abstract":"We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 µm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121642672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Infrared metamaterials tuned by liquid crystals 液晶调谐的红外超材料
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699761
A. Minovich, J. Farnell, D. Neshev, D. Powell, I. Shadrivov, I. Mckerracher, H. Tan, C. Jagadish, Y. Kivshar
{"title":"Infrared metamaterials tuned by liquid crystals","authors":"A. Minovich, J. Farnell, D. Neshev, D. Powell, I. Shadrivov, I. Mckerracher, H. Tan, C. Jagadish, Y. Kivshar","doi":"10.1109/COMMAD.2010.5699761","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699761","url":null,"abstract":"We demonstrate the tunability of a left-handed fishnet metamaterial at near infra-red frequencies. The structure is infiltrated by a liquid crystal and the tunability is achieved due the reorientation of liquid crystal molecules.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124346108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical control of gate length in lateral wrap-gated InAs nanowire FETs 横向包封InAs纳米线场效应管栅极长度的化学控制
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699726
A. Micolich, K. Storm, L. Samuelson
{"title":"Chemical control of gate length in lateral wrap-gated InAs nanowire FETs","authors":"A. Micolich, K. Storm, L. Samuelson","doi":"10.1109/COMMAD.2010.5699726","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699726","url":null,"abstract":"We present a method for attaining chemical control of the gate-length in wrap-gated InAs nanowire transistors where the nanowire is oriented horizontally rather than vertically. A key advantage of this method is its simplicity - precise gate-length control is established with a single wet etch step, and beyond the definition of the source, drain and gate leads, no further lithography is required. The method provides an effective route to producing a wrap-gate that covers the full range from just less than the source-drain contact separation to wrap-gates as small as 300 nm in length.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121036139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN 极低功率电感耦合等离子体刻蚀对p-GaN欧姆接触的影响
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699708
A. Baharin, R. Pinto, U. Mishra, B. Nener, G. Parish
{"title":"Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN","authors":"A. Baharin, R. Pinto, U. Mishra, B. Nener, G. Parish","doi":"10.1109/COMMAD.2010.5699708","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699708","url":null,"abstract":"We report on the electrical characterisation of etched Mg-doped p-GaN layers using low power inductively coupled plasma reactive ion etching (ICP-RIE). Although the quality of ohmic contacts to p-GaN is generally degraded by plasma etching, the results, assessed by current-voltage characteristics and Transmission Line Model (TLM) analysis, indicate that the ohmic contacts improve significantly as the power is reduced from ICP/RF power of 150/75 W to very low ICP/RF power of 40/20 W.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116191634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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