J. Chen, O. Klochan, A. Micolich, A. Hamilton, K. Das Gupta, F. Sfigakis, D. Ritchie, K. Trunov, D. Reuter, A. Wieck
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Fabrication and characterisation of an induced ambipolar device on AlGaAs/GaAs Heterostructures
In this study a metal-insulator semiconductor field effect transistor (MISFET) was fabricated on an undoped (100)-oriented AlGaAs/GaAs heterostructure. This device has the ability to switch the charge carriers in the conduction channel between electrons and holes by switching the sign of the applied top gate voltage. The device was characterised at 0.3K and electron/hole transport measurements were conducted. In the future these devices could potentially be used as lateral p-i-n junctions for fabrication of low dimensional electroluminescent devices.
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