Nanoimprint induced electrical type conversion in HgCdTe

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699723

M. Martyniuk, G. Umana-Membreno, R. Sewell, R. Westerhout, C. Musca, J. Dell, J. Antoszewski, L. Faraone, D. Macintyre, S. Thoms, C. Ironside

引用次数: 0

Abstract

We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.

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纳米压印诱导HgCdTe的电型转换

我们报告了与表面压痕诱导的HgCdTe的p型到n型转换一致的支持证据，作为直接印迹制造光伏红外探测器的进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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