具有增强侧向光提取的氮化镓基发光二极管的设计

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699780

Hyunsoo Kim, Seongjun Kim, Youngjun Park

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引用次数: 1

摘要

我们研究了通过设计台面孔来增强氮化镓基发光二极管(led)的光提取基于Snell定律，可以对作为导向模式横向出口的台地孔进行几何优化。与参考LED相比，带有台面孔的LED输出功率提高了27%，这与光学光线追踪计算结果一致。

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Design of GaN-based light-emitting diodes with enhanced lateral light extraction

We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.1 Based on Snell's law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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