Design of GaN-based light-emitting diodes with enhanced lateral light extraction

Abstract

We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.1 Based on Snell's law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.