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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices 核磁共振在GaAs-AlGaAs纳米结构器件中的应用
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699720
Z. Keane, M. Godfrey, S. Fricke, A. Burke, A. Micolich, A. Hamilton, H. Beere, D. Ritchie
{"title":"Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices","authors":"Z. Keane, M. Godfrey, S. Fricke, A. Burke, A. Micolich, A. Hamilton, H. Beere, D. Ritchie","doi":"10.1109/COMMAD.2010.5699720","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699720","url":null,"abstract":"We present preliminary measurements of resistively detected nuclear magnetic resonance (NMR) in GaAs-AlGaAs quantum point contacts (QPC). Nuclear spins in the host crystal are polarized through the hyperfine interaction with carriers near the QPC; this polarization can be detected via the fourterminal resistance and manipulated with a radio-frequency magnetic field.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121278762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correlating properties of PECVD SiNx layers to deposition parameters PECVD SiNx层性能与沉积参数的关系
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699737
K. Vora, K. Belay, D. Pyke, F. Karouta, C. Jagadish
{"title":"Correlating properties of PECVD SiNx layers to deposition parameters","authors":"K. Vora, K. Belay, D. Pyke, F. Karouta, C. Jagadish","doi":"10.1109/COMMAD.2010.5699737","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699737","url":null,"abstract":"We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121404708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN Si掺杂MOCVD生长GaN中扩散长度的电子束感应电流测量
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699739
D. Wee, G. Parish, B. Nener
{"title":"Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN","authors":"D. Wee, G. Parish, B. Nener","doi":"10.1109/COMMAD.2010.5699739","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699739","url":null,"abstract":"This paper reports on the electron-beam induced current (EBIC) measurement of minority carrier diffusion length as a function of electron beam acceleration voltage in Si-doped, MOCVD grown, gallium nitride. The measured diffusion length varied from 160nm at 8kV to 220nm at 15kV. Possible reasons for the observed diffusion length dependence on voltage are discussed.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122387106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs 在掺磷硅mosfet中电检测磁共振的射频读出
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699750
L. H. Willems van Beveren, H. Hueb, R. Starrett, A. Morello
{"title":"Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs","authors":"L. H. Willems van Beveren, H. Hueb, R. Starrett, A. Morello","doi":"10.1109/COMMAD.2010.5699750","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699750","url":null,"abstract":"We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus- doped silicon metal-oxide field-effect-transistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128744566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bistable resistive switching in hafnium-silicate thin films 硅酸铪薄膜中的双稳态电阻开关
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699730
M. Saleh, D. Belay, T. Kim, R. Elliman
{"title":"Bistable resistive switching in hafnium-silicate thin films","authors":"M. Saleh, D. Belay, T. Kim, R. Elliman","doi":"10.1109/COMMAD.2010.5699730","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699730","url":null,"abstract":"We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1−xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 103. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 104s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128498973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SOI promises for speed, energy and memory SOI承诺提高速度、能量和内存
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699749
S. Cristoloveanu
{"title":"SOI promises for speed, energy and memory","authors":"S. Cristoloveanu","doi":"10.1109/COMMAD.2010.5699749","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699749","url":null,"abstract":"The current status, future trends and economic implications of SOI technology are reviewed. SOI offers ample room for ultimate scaling, speed improvement, power saving and innovative device concepts. Several technology boosters, infusing further gains in performance and miniaturization, will be discussed. The capacitorless single-transistor DRAM will be presented as a typical example of diversified functionality in SOI devices and circuits.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114699096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast visible photoresponse of CdS bridging nanowires CdS桥接纳米线的快速可见光响应
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699746
Jinzhang Liu, Jaeku Park, Y. Ahn, Ji-Yong Park, Soonil Lee
{"title":"Fast visible photoresponse of CdS bridging nanowires","authors":"Jinzhang Liu, Jaeku Park, Y. Ahn, Ji-Yong Park, Soonil Lee","doi":"10.1109/COMMAD.2010.5699746","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699746","url":null,"abstract":"CdS nanowires are selectively grown onto patterned Ti/Au electrodes. The nanowires bridging the electrodes act as sensing elements and show fast response to visible lights with energy above the band gap of CdS.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125687045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of SMA thin film deposited on buffer layer 缓冲层上沉积SMA薄膜的研制
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699735
K. Tsuchiya, T. Sato
{"title":"Development of SMA thin film deposited on buffer layer","authors":"K. Tsuchiya, T. Sato","doi":"10.1109/COMMAD.2010.5699735","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699735","url":null,"abstract":"The shape memory effect for TiNi to improve by using strain in the thin film deposited on a buffer layer (Nb, Mo, Ta, and W) has been investigated. First of all, the contact points on each surface between TiNi thin film and buffer layers (where the contact point is defined as atomic position difference for bonding between each atom on lattice axis in both surface of thin film and buffer layer) were calculated to obtain the mismatch rate under 1 %. Secondly, TiNi thin films on each buffer layers deposited by ECR sputter deposition method were evaluated by XRD and these strains in the films by changed lattice constants by the effect of buffer layer were also calculated from the sifted incident angles based on ICDD. As the result, the relationship between contact points and strained lattice constant in thin film calculated by using data based on XRD intensity data showed strong negative correlations and the contact points is effective to control the lattice constant of the thin films to give the strain into the thin film.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132923916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells In-GaAs/GaAs量子点太阳能电池暗电流特性的温度依赖性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1063/1.3586251
H. Lu, L. Fu, G. Jolley, H. Tan, S. R. Tatavarti, C. Jagadish
{"title":"Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells","authors":"H. Lu, L. Fu, G. Jolley, H. Tan, S. R. Tatavarti, C. Jagadish","doi":"10.1063/1.3586251","DOIUrl":"https://doi.org/10.1063/1.3586251","url":null,"abstract":"Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I–V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130785613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Bio inspired infrared retina for fourth gen infrared sensors 第四代红外传感器的仿生红外视网膜
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699698
S. Krishna
{"title":"Bio inspired infrared retina for fourth gen infrared sensors","authors":"S. Krishna","doi":"10.1109/COMMAD.2010.5699698","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699698","url":null,"abstract":"Infrared detectors are in the third generation of their evolution and are moving towards large format, multicolour and higher operating temperature imagers. However all the pixels in an infrared imager look essentially the same. In this paper, we will discuss the concept of a bioinspired infrared retina, in which added functionality such color, polarization or gain is encoded in the individual pixels. However, one distinguishing feature of the natural sensors like the human eye is ability to couple this powerful multimodal sensor with intelligent algorithms that only send small amounts of relevant data to the brain.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123235620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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