{"title":"SOI承诺提高速度、能量和内存","authors":"S. Cristoloveanu","doi":"10.1109/COMMAD.2010.5699749","DOIUrl":null,"url":null,"abstract":"The current status, future trends and economic implications of SOI technology are reviewed. SOI offers ample room for ultimate scaling, speed improvement, power saving and innovative device concepts. Several technology boosters, infusing further gains in performance and miniaturization, will be discussed. The capacitorless single-transistor DRAM will be presented as a typical example of diversified functionality in SOI devices and circuits.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SOI promises for speed, energy and memory\",\"authors\":\"S. Cristoloveanu\",\"doi\":\"10.1109/COMMAD.2010.5699749\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The current status, future trends and economic implications of SOI technology are reviewed. SOI offers ample room for ultimate scaling, speed improvement, power saving and innovative device concepts. Several technology boosters, infusing further gains in performance and miniaturization, will be discussed. The capacitorless single-transistor DRAM will be presented as a typical example of diversified functionality in SOI devices and circuits.\",\"PeriodicalId\":129653,\"journal\":{\"name\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"volume\":\"99 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2010.5699749\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2010.5699749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The current status, future trends and economic implications of SOI technology are reviewed. SOI offers ample room for ultimate scaling, speed improvement, power saving and innovative device concepts. Several technology boosters, infusing further gains in performance and miniaturization, will be discussed. The capacitorless single-transistor DRAM will be presented as a typical example of diversified functionality in SOI devices and circuits.
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