PECVD SiNx层性能与沉积参数的关系

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699737

K. Vora, K. Belay, D. Pyke, F. Karouta, C. Jagadish

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引用次数: 0

摘要

本文采用PECVD方法研究了SiH4流量、RF功率、LF/HF功率比和沉积温度等参数对沉积SiNx层的折射率、机械应力、沉积速率、N/Si比、h掺杂的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Correlating properties of PECVD SiNx layers to deposition parameters

We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature.

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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