{"title":"硅酸铪薄膜中的双稳态电阻开关","authors":"M. Saleh, D. Belay, T. Kim, R. Elliman","doi":"10.1109/COMMAD.2010.5699730","DOIUrl":null,"url":null,"abstract":"We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1−xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 103. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 104s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bistable resistive switching in hafnium-silicate thin films\",\"authors\":\"M. Saleh, D. Belay, T. Kim, R. Elliman\",\"doi\":\"10.1109/COMMAD.2010.5699730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1−xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 103. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 104s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.\",\"PeriodicalId\":129653,\"journal\":{\"name\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2010.5699730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2010.5699730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bistable resistive switching in hafnium-silicate thin films
We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1−xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 103. Both states, performed by dc voltage sweeping and applying short pulses, are stable over 104s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.
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