Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699720

Z. Keane, M. Godfrey, S. Fricke, A. Burke, A. Micolich, A. Hamilton, H. Beere, D. Ritchie

引用次数: 0

Abstract

We present preliminary measurements of resistively detected nuclear magnetic resonance (NMR) in GaAs-AlGaAs quantum point contacts (QPC). Nuclear spins in the host crystal are polarized through the hyperfine interaction with carriers near the QPC; this polarization can be detected via the fourterminal resistance and manipulated with a radio-frequency magnetic field.

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核磁共振在GaAs-AlGaAs纳米结构器件中的应用

我们提出了在GaAs-AlGaAs量子点接触(QPC)中电阻检测核磁共振(NMR)的初步测量。宿主晶体中的核自旋通过与量子点附近载流子的超精细相互作用发生极化;这种极化可以通过四端电阻检测，并通过射频磁场进行操纵。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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