二氧化硅包层硅纳米线的色散和非线性损耗特性分析

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699768

Dihan Md. Nuruddin Hasan, M. Shah Alam, K. M. Mohsin, M. N. Hossain

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引用次数: 0

摘要

利用全矢量有限元法建立了硅纳米线不同几何图形的传播特性解析方程。对模相关非线性损耗的分析表明，高阶模的信号功率衰减要小于在纳米线中激发的基模。

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Analysis of dispersion and nonlinear loss characteristics of silica clad silicon nanowire

An analytic equation has been proposed to realize propagation characteristics for different geometrical patterns of silicon nanowire using full vector FEM. Analysis of mode dependent nonlinear loss has revealed that attenuation of signal power is less for higher order modes than for the fundamental modes excited in the nanowire.

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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