{"title":"控制二氧化硅纳米线的横向生长","authors":"Tae-Hyun Kim, A. Shalav, R. Elliman","doi":"10.1109/COMMAD.2010.5699779","DOIUrl":null,"url":null,"abstract":"This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Controlled lateral growth of silica nanowire\",\"authors\":\"Tae-Hyun Kim, A. Shalav, R. Elliman\",\"doi\":\"10.1109/COMMAD.2010.5699779\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.\",\"PeriodicalId\":129653,\"journal\":{\"name\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2010.5699779\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2010.5699779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
