A comparative study of transistors based on wurtzite and zincblende InAs nanowires

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699740

M. Williams, A. Burke, H. Joyce, A. Micolich, H. Tan, C. Jagadish

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Abstract

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.

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纤锌矿和锌闪锌矿InAs纳米线晶体管的比较研究

我们报告了一项对名义上相同的纳米线场效应晶体管(NW-FET)器件的电子特性的比较研究，这些器件使用50 nm直径的InAs纳米线生产，只在相位上有所不同:一方面是ZB，另一方面是WZ。我们发现在ZB nw - fet中有更高的电流密度，并且开/关比高达100。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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