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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Large area metal-silicone flexible electronic structures 大面积金属硅柔性电子结构
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699731
C. Shah, S. Sriram, M. Bhaskaran, A. Mitchell
{"title":"Large area metal-silicone flexible electronic structures","authors":"C. Shah, S. Sriram, M. Bhaskaran, A. Mitchell","doi":"10.1109/COMMAD.2010.5699731","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699731","url":null,"abstract":"Conductive structures on flexible substrates are expected to be the foundation of the next generation of electronics, displays, and solar cells. This work presents a simplified fabrication process for definition of electrode structures on silicone polymer. Flexible gold thin film structures on polydimethyl siloxane (PDMS) were successfully realised. This process is conducive to large area fabrication of flexible electrode structures, for incorporation with microfluidics, and for conformal adhesion to non-planar surfaces.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116570047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Resistance switching in polycrystalline NiOx thin film 多晶NiOx薄膜的电阻开关
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699751
Tae-Hyun Kim, M. Saleh, S. Kim, D. Venkatachalam, K. Belay, Andrew Burgess, Stephan Strumpp, R. Elliman
{"title":"Resistance switching in polycrystalline NiOx thin film","authors":"Tae-Hyun Kim, M. Saleh, S. Kim, D. Venkatachalam, K. Belay, Andrew Burgess, Stephan Strumpp, R. Elliman","doi":"10.1109/COMMAD.2010.5699751","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699751","url":null,"abstract":"Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of solar cell utilizing digital fabrication technology 利用数字制造技术制造太阳能电池
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699693
S. Umezu, Y. Kunugi, Y. Yuya, A. Fukasawa, S. Tokunaga, A. Ishii, A. Azetsu, H. Ohmori
{"title":"Fabrication of solar cell utilizing digital fabrication technology","authors":"S. Umezu, Y. Kunugi, Y. Yuya, A. Fukasawa, S. Tokunaga, A. Ishii, A. Azetsu, H. Ohmori","doi":"10.1109/COMMAD.2010.5699693","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699693","url":null,"abstract":"Solar cell is one of the key technologies in this century because this has possibility to clear energy problems. In this paper, we tried to fabricate TiO2 layer of solar cell utilizing digital fabrication technology. The digital fabrication technology is an inkjet fabrication method. Our inkjet technology has good merit; that is ability to eject highly viscous liquid. We applied the inkjet technology for fabricating TiO2 layer on FTO glass. The thickness of TiO2 layer was controlled by the time to print.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132851249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoelectric thin film deposition: Self-assembled island structures and low temperature processing 压电薄膜沉积:自组装岛状结构及低温加工
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699762
S. Sriram, M. Bhaskaran, A. Mitchell
{"title":"Piezoelectric thin film deposition: Self-assembled island structures and low temperature processing","authors":"S. Sriram, M. Bhaskaran, A. Mitchell","doi":"10.1109/COMMAD.2010.5699762","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699762","url":null,"abstract":"New deposition regimes for strontium-doped lead zirconate titanate (PSZT) piezoelectric thin films on silicon substrates are outlined in this work. Optimised conditions have enabled the demonstration of an intermetallic reaction driven self-assembly process for formation of islands of piezoelectric and the use of lattice guiding by a metal layer to perform low temperature deposition of piezoelectric thin films.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133217068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dispersion of lanthanum hexaboride nanoparticles in water and in sol-gel silica arrays 六硼化镧纳米颗粒在水中和溶胶-凝胶二氧化硅阵列中的分散
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699718
F. Jiang, Y. Leong, M. Martyniuk, A. Keating, J. Dell
{"title":"Dispersion of lanthanum hexaboride nanoparticles in water and in sol-gel silica arrays","authors":"F. Jiang, Y. Leong, M. Martyniuk, A. Keating, J. Dell","doi":"10.1109/COMMAD.2010.5699718","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699718","url":null,"abstract":"Dispersion of lanthanum hexaboride (LaB6) nanoparticles in water and in sol-gel silica was investigated. The average size of lanthanum hexaboride nanoparticles/agglomenties decreases with increasing magnitude of the zeta potential in water with and without citric acid. Citrate-coated LaB6 nanoparticles were freeze-dried and mixed with TEOS/ethanol/water/HCl to disperse the nanoparticles in the sol-gel silica. A model for the interaction of citrate coated LaB6 and silica is presented.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133810407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development 离子敏感AlGaN/GaN异质结构用于细胞生物传感器的开发
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699704
A. Podolska, S. Dunnage, G. Umana-Membreno, R. Seeber, T. Fehlberg, S. Keller, U. Mishra, K. Pfleger, B. Nener, G. Parish
{"title":"Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development","authors":"A. Podolska, S. Dunnage, G. Umana-Membreno, R. Seeber, T. Fehlberg, S. Keller, U. Mishra, K. Pfleger, B. Nener, G. Parish","doi":"10.1109/COMMAD.2010.5699704","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699704","url":null,"abstract":"We have investigated the ion sensitivity of ungated AlGaN/GaN heterostructure-based devices and found that these devices are sensitive and selective to the negative ion concentration in the solution. Such selectivity towards negative ions can be employed in cell-based biosensor applications via detection of negative ion transport through the cell membrane/ion channels. Compatibility of living cells and AlGaN/GaN heterostructures for this application has therefore been investigated qualitatively and quantitatively by flow cytometry. Although the mortality rate increases marginally with Al composition, this effect is not strong. This provides much-needed flexibility in designing biosensors by enabling Al mole fraction to be selected on the basis of optimum heterostructure properties. The results of these investigations are very promising for cell-based biosensor development.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122342474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reactive ion etching of porous silicon for MEMS applications 用于MEMS应用的多孔硅的反应离子刻蚀
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699721
M. Lai, G. Parish, Yinong Liu, A. Keating
{"title":"Reactive ion etching of porous silicon for MEMS applications","authors":"M. Lai, G. Parish, Yinong Liu, A. Keating","doi":"10.1109/COMMAD.2010.5699721","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699721","url":null,"abstract":"Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123972406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of enzyme-immobilized polyion complex membrane on label free acetylcholine ion image sensor 无标记乙酰胆碱离子图像传感器上酶固定多离子复合物膜的分析
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699734
S. Takenaga, Y. Tamai, K. Okumura, F. Mizutani, M. Ishida, K. Sawada
{"title":"Analysis of enzyme-immobilized polyion complex membrane on label free acetylcholine ion image sensor","authors":"S. Takenaga, Y. Tamai, K. Okumura, F. Mizutani, M. Ishida, K. Sawada","doi":"10.1109/COMMAD.2010.5699734","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699734","url":null,"abstract":"32 × 32 acetylcholine (ACh) image sensor was successfully obtained for a real time ACh distribution image. In this work, the sensor using optimized enzyme-immobilized polyion complex membrane composed of poly-L-lysine and poly (sodium 4-styrensulfonate) was measured with better stability and repeatability. The optimized polyion complex membrane was fabricated with better adhesion to the sensor. As a result, the noise was reduced and the sensor can be measured repeatedly unless the enzyme is inactivated and the membrane is removed.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114343186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrical properties of Si-XII and Si-III formed by nanoindentation 纳米压痕形成的Si-XII和Si-III的电学性质
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699682
Y. Wang, S. Ruffell, K. Sears, A. Knights, J. Bradby, J.S. Williams
{"title":"Electrical properties of Si-XII and Si-III formed by nanoindentation","authors":"Y. Wang, S. Ruffell, K. Sears, A. Knights, J. Bradby, J.S. Williams","doi":"10.1109/COMMAD.2010.5699682","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699682","url":null,"abstract":"Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-I) having different electrical properties. Two such phases, Si-III (BC8) and Si-XII (R8), can be formed by indentation but little is known about their electrical properties. Theoretical studies predict Si-III to be a semimetal [1] and Si-XII to be a narrow band gap semiconductor [2]. We report the first electrical measurements on these phases, which we have formed by nanoindentation. We demonstrate that Si-XII is a semiconductor that can be electrically doped with boron and phosphorus at room temperature. We also demonstrate early devices formed by nanoindentation at room temperature.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125121785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Thermal dependence of the signal to noise ratio of self-mixing sensors based on multimode VCSELs 基于多模VCSELs的自混频传感器信噪比的热依赖性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699786
Ranveer Matharu, J. Perchoux, R. Kliese, Y. Lim, A. Rakić
{"title":"Thermal dependence of the signal to noise ratio of self-mixing sensors based on multimode VCSELs","authors":"Ranveer Matharu, J. Perchoux, R. Kliese, Y. Lim, A. Rakić","doi":"10.1109/COMMAD.2010.5699786","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699786","url":null,"abstract":"We investigate experimentally the signal-to-noise ratio (SNR) of the self-mixing signal from a Vertical-Cavity Surface-Emitting Laser (VCSEL) based sensor as a function of laser driving current and the ambient temperature. The maximum SNR in the current-temperature space can be well approximated by the model related to the temperature dependence of the threshold current for individual VCSEL transverse modes.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"39 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116496781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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