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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD 高温后退火对MOCVD生长GaAs NWs侧壁的影响
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699774
Yanan Guo, J. Zou, H. Joyce, Q. Gao, H. Tan, C. Jagadish
{"title":"Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD","authors":"Yanan Guo, J. Zou, H. Joyce, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699774","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699774","url":null,"abstract":"The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124684495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence of InGaN MQWs grown on misorientated GaN substrates 在错取向GaN衬底上生长的InGaN MQWs的发光特性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699700
C. Nenstiel, T. Switaisky, M. Alic, T. Suski, M. Albecht, Matthew R. Phillips, Axel Hoffmann
{"title":"Luminescence of InGaN MQWs grown on misorientated GaN substrates","authors":"C. Nenstiel, T. Switaisky, M. Alic, T. Suski, M. Albecht, Matthew R. Phillips, Axel Hoffmann","doi":"10.1109/COMMAD.2010.5699700","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699700","url":null,"abstract":"Optoelectronic devices based on InGaN have already been commercialised, however, the Indium content is limited to around 5%. With higher Indium concentration the quantum efficiency decreases, which is thought to be due to increasing inhomogeneity. In this work it is shown that the growth of InGaN on misorientated GaN substrates forces these Indium fluctuations on a nanometre scale. Temperature dependent luminescence measurements provide information about the homogeneity of the band structure. Energy selective excitation confirms the existence of localisation centres and indicates their energetic depth. Time-resolved measurements define the lifetime of localized excitons, which provides information about radiative and nonradiative processes as well as tunnelling mechanisms between the localization centres. Indium fluctuations at the nm and µm scale are measured using cathodoluminescence (CL) and Micro Photoluminescence (μPL) respectively.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127442004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficiency coupling of light from photonic wire lasers into Nano-antennas 光子线激光器与纳米天线的高效耦合
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699783
Z. Li, H. Hattori, L. Fu, H. Tan, C. Jagadish
{"title":"High efficiency coupling of light from photonic wire lasers into Nano-antennas","authors":"Z. Li, H. Hattori, L. Fu, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699783","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699783","url":null,"abstract":"Plasmonic nano-antennas constructed by placing a sub-wavelength dielectric (e.g., air) gap between two metallic regions can generate high intense electric fields in small regions which can be used to excite nonlinear effects such as the Surface Enhanced Raman Scattering or to visualize nano-particles. However, since nano-antennas are passive devices, they need to be driven by external light sources. In this article, we study effective ways to combine photonic wire lasers and nano-antennas. We show that, by using linear tapers as couplers, we can efficiently couple light from lasers into nano-antennas and further enhance the electric fields inside the nano-antennas.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121228841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate determination of electronic transport parameters in multi-carrier and multi-layer HgCdTe structures 多载流子多层HgCdTe结构中电子输运参数的精确测定
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699690
G. Umana-Membreno, J. Antoszewski, E. Smith, G. Venzor, V. Phillips, S. Johnson, L. Faraone
{"title":"Accurate determination of electronic transport parameters in multi-carrier and multi-layer HgCdTe structures","authors":"G. Umana-Membreno, J. Antoszewski, E. Smith, G. Venzor, V. Phillips, S. Johnson, L. Faraone","doi":"10.1109/COMMAD.2010.5699690","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699690","url":null,"abstract":"A study is presented of multi-carrier electronic transport parameters in HgCdTe films extracted through use of advanced mobility spectrum analysis techniques. It is shown that even in single layer long-wave infrared HgCdTe epitaxial films three well-defined electron species associated with the surface, bulk and substrate-interface regions can be accurately discriminated. Furthermore, it is also shown that the application of high-resolution quantitative mobility spectrum analysis techniques allows the accurate extraction of the individual transport parameters of carriers in complex multilayer HgCdTe heterostructures.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128028189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well AlInGaAs/InGaAs量子阱中混合机制的研究
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699772
S. Du, L. Fu, H. Tan, C. Jagadish
{"title":"Study of intermixing mechanism in AlInGaAs/InGaAs quantum well","authors":"S. Du, L. Fu, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699772","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699772","url":null,"abstract":"In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133264589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vortex polarization states in nanoferroelectrics 纳米热电学中的涡旋极化态
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699683
B. Rodriguez, X. Gao, L.F. Liu, W. Lee, I. Naumov, A. Bratkovsky, D. Hesse, M. Alexe
{"title":"Vortex polarization states in nanoferroelectrics","authors":"B. Rodriguez, X. Gao, L.F. Liu, W. Lee, I. Naumov, A. Bratkovsky, D. Hesse, M. Alexe","doi":"10.1109/COMMAD.2010.5699683","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699683","url":null,"abstract":"Two-dimensional arrays of ferroelectric lead zirconate titanate (PZT) nanodots fabricated using pulsed laser deposition (PLD) through ultrathin anodic aluminum oxide (AAO) membrane stencil masks have been investigated using piezoresponse force microscopy (PFM). Core-polarization states, which may indicate the presence of quasi-toroidal polarization ordering, have been observed. Existing theoretical data have been used to determine the signature of a vortex polarization state in a PFM experiment and compared to the measured data.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115247414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterisation of nanostructures via terahertz spectroscopy 纳米结构的太赫兹光谱表征
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699756
P. Parkinson, H. Joyce, X. Xu, Q. Gao, H. Tan, C. Jagadish, L. Herz, M. Johnston
{"title":"Characterisation of nanostructures via terahertz spectroscopy","authors":"P. Parkinson, H. Joyce, X. Xu, Q. Gao, H. Tan, C. Jagadish, L. Herz, M. Johnston","doi":"10.1109/COMMAD.2010.5699756","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699756","url":null,"abstract":"We have used terahertz spectroscopy to measure the conductivity and time-resolved photoconductivity of a range of semiconducting nanostructures. This article focuses on our recent terahertz conductivity studies on semiconductor nanowires and single walled carbon nanotubes.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123249951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ambipolar conduction in recessed channel Schottky barrier MOSFETs 凹沟道肖特基势垒mosfet的双极传导
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699732
C. Shih, Shao-Hui Yang, R. Shia, Nguyen Dang Chien
{"title":"Ambipolar conduction in recessed channel Schottky barrier MOSFETs","authors":"C. Shih, Shao-Hui Yang, R. Shia, Nguyen Dang Chien","doi":"10.1109/COMMAD.2010.5699732","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699732","url":null,"abstract":"The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. However, the parasitic recessed channel leads to a lower on-state driving current. The depth of the recessed channel must be well designed to have good current characteristics in RC-SBMOS. Importantly, the recessed channel structure has only a mild effect on suppressing the off-state ambipolar hole current.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123341973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photovoltaic micro-cell design for distrubuted power in sensor networks 传感器网络中分布式电源的光伏微电池设计
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699696
G. Allwood, G. Wild, S. Hinckley
{"title":"Photovoltaic micro-cell design for distrubuted power in sensor networks","authors":"G. Allwood, G. Wild, S. Hinckley","doi":"10.1109/COMMAD.2010.5699696","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699696","url":null,"abstract":"We present a new study of power over optical fiber, for use in optical fiber smart sensor networks, using silicon-based photovoltaic micro-cells. A number of parameters in the design of the micro-cell for implementation in a power converter chip have been investigated. Matching the beam profile to the active region, as well as maximizing the contact area improves the device efficiency. The effect of doping profile and junction type on the device performance, suggests silicon is a cost effective and suitable material for this application.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121362630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Patterned quantum dot and nanopore lasers 图案量子点和纳米孔激光器
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699680
J. Coleman
{"title":"Patterned quantum dot and nanopore lasers","authors":"J. Coleman","doi":"10.1109/COMMAD.2010.5699680","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699680","url":null,"abstract":"The formation of patterned quantum dot lasers and laser results for this type of quantum dot laser are outlined. A novel inverted quantum dot structure or nanopore laser containing three dimensional quantization formed from an engineered periodicity is described.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130826299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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