Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699774

Yanan Guo, J. Zou, H. Joyce, Q. Gao, H. Tan, C. Jagadish

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Abstract

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

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高温后退火对MOCVD生长GaAs NWs侧壁的影响

研究了砷化镓纳米线的侧壁面。在450℃下生长的GaAs NWs的侧壁为{112}晶面。然而，在650°C退火30 min后，GaAs NWs的侧壁开始变成{110}。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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