高温后退火对MOCVD生长GaAs NWs侧壁的影响

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699774

Yanan Guo, J. Zou, H. Joyce, Q. Gao, H. Tan, C. Jagadish

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引用次数: 0

摘要

研究了砷化镓纳米线的侧壁面。在450℃下生长的GaAs NWs的侧壁为{112}晶面。然而，在650°C退火30 min后，GaAs NWs的侧壁开始变成{110}。

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Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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