Resistance switching in polycrystalline NiOx thin film

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699751

Tae-Hyun Kim, M. Saleh, S. Kim, D. Venkatachalam, K. Belay, Andrew Burgess, Stephan Strumpp, R. Elliman

引用次数: 1

Abstract

Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.

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多晶NiOx薄膜的电阻开关

利用热化学模型研究了多晶NiOx介电膜的电阻开关特性，其中场致导电丝在焦耳加热下形成并断裂。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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