{"title":"用于MEMS应用的多孔硅的反应离子刻蚀","authors":"M. Lai, G. Parish, Yinong Liu, A. Keating","doi":"10.1109/COMMAD.2010.5699721","DOIUrl":null,"url":null,"abstract":"Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Reactive ion etching of porous silicon for MEMS applications\",\"authors\":\"M. Lai, G. Parish, Yinong Liu, A. Keating\",\"doi\":\"10.1109/COMMAD.2010.5699721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.\",\"PeriodicalId\":129653,\"journal\":{\"name\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2010.5699721\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2010.5699721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reactive ion etching of porous silicon for MEMS applications
Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
