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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)最新文献

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X-band MMIC GaN power amplifiers designed for high-efficiency supply-modulated transmitters x波段MMIC GaN功率放大器设计用于高效率的供应调制发射机
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697435
S. Schafer, M. Litchfield, Andrew H. Zai, Z. Popovic, C. Campbell
{"title":"X-band MMIC GaN power amplifiers designed for high-efficiency supply-modulated transmitters","authors":"S. Schafer, M. Litchfield, Andrew H. Zai, Z. Popovic, C. Campbell","doi":"10.1109/MWSYM.2013.6697435","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697435","url":null,"abstract":"The design and measured performance of X-band power amplifier MMICs that utilize 0.15μm GaN on SiC process technology are presented. Under continuous wave operating conditions these single and 2-stage MMICs demonstrate peak power added efficiencies (PAE) from 45% to 69%, output powers from 2.5-13W, and up to 20dB of large signal gain. Designed for drain modulated applications, the power amplifiers maintain good performance at reduced drain bias voltage. The output power of the two stage MMIC can be varied from 2W to 13W when the drain bias is varied between 7.5V and 20V while maintaining a PAE above 54%.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130023642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Highly efficient wireless energy harvesting system using metamaterial based compact CP antenna 采用基于超材料的紧凑CP天线的高效无线能量收集系统
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697693
K. Agarwal, T. Mishra, M. Karim, Nasimuddin, M. Chuen, Yong-xin Guo, S. K. Panda
{"title":"Highly efficient wireless energy harvesting system using metamaterial based compact CP antenna","authors":"K. Agarwal, T. Mishra, M. Karim, Nasimuddin, M. Chuen, Yong-xin Guo, S. K. Panda","doi":"10.1109/MWSYM.2013.6697693","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697693","url":null,"abstract":"This paper presents a highly efficient 2.4 GHz wireless energy harvesting system comprising of a metamaterial based circularly polarized (CP) antenna and a power management circuit. The antenna is designed at 2.4 GHz using a circular slotted truncated corner square patch radiator placed on reactive impedance surface (RIS) for antenna size miniaturization, better impedance matching and to improve the front-to-back ratio. The power management system integrates a matching circuit with a single stage Dickson charge pump and an ultra low power with high efficiency DC/DC boost converter/charger. The Dickson charge pump uses three Schottky diodes to minimize the losses at high frequency. The DC-DC converter (BQ25504) is capable of acquiring and managing low power levels. The measured axial ratio (boresight) is below 3-dB for the entire 2.40-2.48 GHz band and the 10-dB return loss band is from 2.35-2.49 GHz. The gain (boresight) of the antenna is around 4.6 dBic at 2.44 GHz. The proposed antenna shows an improvement in front-to-back ratio of around 3 dB with size reduction of approximately 22%. The power management system generates an output voltage level of 1.5 volts at -10 dBm and 4 volts at 0 dBm input RF power respectively. The overall efficiency of the proposed energy harvesting system is above 28%.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133891947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology GaN技术中用于单片集成电路的新型半无功匹配多级宽带功率放大器结构
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697403
Philippe Dennler, R. Quay, O. Ambacher
{"title":"Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology","authors":"Philippe Dennler, R. Quay, O. Ambacher","doi":"10.1109/MWSYM.2013.6697403","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697403","url":null,"abstract":"This paper reports on a novel broadband amplifier architecture suitable for wide bandwidth applications such as electronic warfare systems. The proposed topology comprises a distributed active power splitter to function as a driver stage for a reactively-matched power amplifier. As a result, a purely resistive interstage impedance is obtained and therefore the proposed architecture allows wider bandwidth operation as compared to the conventional reactively-matched multistage topology. Due to the traveling wave amplifier character of the driver stage, the presented novel amplifier topology is named semi-reactively-matched amplifier. A 6GHz to 20GHz dualstage high power amplifier MMIC is designed and realized in order to demonstrate the capabilities of the new concept. The MMIC is based on a 0.25μm gate length AlGaN/GaN HEMT microstrip transmission line technology. It shows a measured small-signal gain of (18 ± 4)dB over the entire frequency range. The saturated output power is higher than 4.5W at 20GHz in continuous wave operation.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133981931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Behavioral modeling of outphasing amplifiers considering memory effects 考虑记忆效应的失相放大器行为建模
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697764
P. Landin, T. Eriksson, J. Fritzin, A. Alvandpour
{"title":"Behavioral modeling of outphasing amplifiers considering memory effects","authors":"P. Landin, T. Eriksson, J. Fritzin, A. Alvandpour","doi":"10.1109/MWSYM.2013.6697764","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697764","url":null,"abstract":"This paper proposes a behavioral model structure for outphasing amplifiers. The model performance is evaluated on a class-D CMOS outphasing amplifier and compared with two models found in the literature. The proposed model structure also allows the use of memory in a parallel Hammerstein-like setting. The proposed models show improvements in adjacent channel error power ratio (ACEPR) of approximately 5 dB in addition to being linear in the parameters. The lower model errors enable the use and design of improved predistorters taking frequency dependency (memory effects) in outphasing amplifiers into account.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131796268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Determination of sugar concentration in aqueous solutions using ultra-wideband microwave impedance spectroscopy 超宽带微波阻抗光谱法测定水溶液中糖浓度
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697563
G. Guarin, M. Hofmann, R. Weigel, G. Fischer, D. Kissinger
{"title":"Determination of sugar concentration in aqueous solutions using ultra-wideband microwave impedance spectroscopy","authors":"G. Guarin, M. Hofmann, R. Weigel, G. Fischer, D. Kissinger","doi":"10.1109/MWSYM.2013.6697563","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697563","url":null,"abstract":"This paper describes the concept of combining pseudo random noise sequences and a microstrip sensor for measurement of glucose in aqueous solutions. The propagation characteristics of the microstrip sensor are variables dependent of the glucose concentration in contact with. These are measured as a function of the frequency using a maximal length sequence that in contrast with other frequency sweep based methods, offers a shorter measurement time. The presented system uses low-power microwave energy over the frequency range between 23 MHz and 12 GHz. With the implemented system glucose concentrations from 5000 mg/dl to 100 mg/dl can be estimated by detecting the changes of phase on the microstrip sensor. One potential future application for this system is the measurement of blood glucose levels in a noninvasive way.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132815237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
A Doherty amplifier with maximally flat efficiency in the bandwidth 带宽效率最高的多尔蒂放大器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697335
R. Giofré, L. Piazzon, P. Colantonio, F. Giannini
{"title":"A Doherty amplifier with maximally flat efficiency in the bandwidth","authors":"R. Giofré, L. Piazzon, P. Colantonio, F. Giannini","doi":"10.1109/MWSYM.2013.6697335","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697335","url":null,"abstract":"This contribution presents a creative circuit level solution to improve the efficiency versus frequency response of the Doherty amplifier. The proposed approach is compared with the conventional one and experimentally validated through a practical prototype realization based on GaN-HEMTs. Continuous wave measurements have shown a 65%-51% efficiency at about 42-36.5-dBm output power from 1.95-GHz to 2.25-GHz. When tested with a mobile WiMAX signal with 5MHz bandwidth and 9.3-dB Peak-to-Average Power Ratio (PAPR), the Doherty amplifier achieved an average efficiency around 50% with an Adjacent Channel Power Ratio (ACPR) lower than -38-dBc. Similar performances have been registered using a signal with 48-MHz bandwidth and 10.3-dB PAPR.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131047877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compact microstrip triplexer based on coupled stepped impedance resonators 基于耦合阶跃阻抗谐振器的紧凑型微带三工器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697516
Hung-Wei Wu, Shih-Hua Huang, Yu-Fu Chen
{"title":"Compact microstrip triplexer based on coupled stepped impedance resonators","authors":"Hung-Wei Wu, Shih-Hua Huang, Yu-Fu Chen","doi":"10.1109/MWSYM.2013.6697516","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697516","url":null,"abstract":"A new compact microstrip triplexer (2.4 / 3.5 / 5.8 GHz) using the coupled stepped impedance resonators (SIRs) is proposed. The triplexer is composed of three pairs of coupled SIRs with impedance ratio (K <; 1) and the source-load coupling lines. The resonant peaks can be easily determined by tuning the impedance ratio (K) and length ratio (α) of the SIRs so as to implement a 2-order bandpass filter individually. The source-load coupling lines are designed to correspond to the quarter-wavelength at the center frequency for each channel. The proposed triplexer is showing a simple configuration, an effective design method and a small circuit size.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132817460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
On the divergence properties of the new efficiency-improved divergence preserved ADI-FDTD method 关于新的效率改进的保散度ADI-FDTD方法的散度特性
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697493
Shunchuan Yang, Z. Chen, Yiqiang Yu, Sergey A. Ponomarenko
{"title":"On the divergence properties of the new efficiency-improved divergence preserved ADI-FDTD method","authors":"Shunchuan Yang, Z. Chen, Yiqiang Yu, Sergey A. Ponomarenko","doi":"10.1109/MWSYM.2013.6697493","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697493","url":null,"abstract":"In this paper, the new efficiency-improved divergence preserved ADI-FDTD method and its divergence property is presented. The efficiency-improved method is analytically proven to retain the expected divergence-free property while having approximately 41.7% fewer floating point operation counts in comparison with the original divergence-preserved ADI-FDTD method. Numerical example is provided to verify the theoretical proof. This work complements the theoretical foundation around the new efficiency-improved unconditionally stable ADI-FDTD method useful for modeling spatially highly resolved regions.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133632162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Non-intrusive characterization of active device interactions in high-efficiency power amplifiers 高效功率放大器中有源器件相互作用的非侵入性表征
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697599
R. Hou, M. Spirito, J. Gajadharsing, L. D. de Vreede
{"title":"Non-intrusive characterization of active device interactions in high-efficiency power amplifiers","authors":"R. Hou, M. Spirito, J. Gajadharsing, L. D. de Vreede","doi":"10.1109/MWSYM.2013.6697599","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697599","url":null,"abstract":"In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally quantified for the first time.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133138258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS 120nm SiGe BiCMOS中的92ghz确定性正交振荡器和N-push调制器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697510
T. D. Gathman, J. Buckwalter
{"title":"A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS","authors":"T. D. Gathman, J. Buckwalter","doi":"10.1109/MWSYM.2013.6697510","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697510","url":null,"abstract":"A voltage-controlled traveling wave oscillator is proposed for deterministic quadrature phase generation. This oscillator topology contains four traveling-wave gain stages that provide 360o phase shift around transmission line ring. The oscillator has a center frequency of 92 GHz and a tuning range of 1.3 GHz. The constructive-wave oscillator is fabricated in a 120-nm SiGe BiCMOS process and occupies a total area of 0.65 × 0.67 mm2 with a power consumption of 32mW.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134475443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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