{"title":"Tri-band isolation circuits using both stop-band and pass-band of double-Lorentz transmission lines for quadruplexers","authors":"Hanseung Lee, T. Itoh","doi":"10.1109/MWSYM.2013.6697414","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697414","url":null,"abstract":"In this paper, novel method to use stop-band of a double-Lorentz transmission line (DL TL) for an isolation circuit is proposed. Combining this concept with conventional usage (operating only in the pass-band) of a DL TL, design flexibility of a DL TL for an isolation circuit can be increased and an engineer can have more choices for designing a DL TL. Also, a designer could get a robust DL TL for an isolation circuit avoiding use of vicinity of stop-band but actively entering into the stop-band, because phase change of a DL TL is fast in the vicinity of stop-band and it could bring difficulty of designing and fabricating a DL TL. The quadruplexer using the proposed method is designed and fabricated. It has still the advantages, i.e. no modifying filters and straightforward design process.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116627336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Crunteanu, E. Lemoine, J. Leroy, D. Passerieux, P. Lévêque, P. Blondy, C. Gaquière, D. Ducatteau, J. Orlianges, C. Champeaux
{"title":"Pulsed power operation of power limiters integrating a phase transition material","authors":"A. Crunteanu, E. Lemoine, J. Leroy, D. Passerieux, P. Lévêque, P. Blondy, C. Gaquière, D. Ducatteau, J. Orlianges, C. Champeaux","doi":"10.1109/MWSYM.2013.6697605","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697605","url":null,"abstract":"We present the operation of microwave power limiters based on reversible phase transition of vanadium dioxide thin films integrated on coplanar waveguides submitted to incident pulsed peak power at 10 GHz. During the pulse on-time, the fabricated devices can be reversibly driven by the incident signal from a high transmission state to a low-transmission level on a relatively short timescale (response times as low as 4 μs for incident peak powers of 35 dBm). The broadband operation and the simplicity of fabrication and integration of these devices, their potential for faster response times, make them attractive as protective devices against continuous or transient RF power.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116773956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 75–90 GHz high linearity MMIC power amplifier with integrated output power detector","authors":"Fernando Diaz Canales, M. Abbasi","doi":"10.1109/MWSYM.2013.6697600","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697600","url":null,"abstract":"A four-stage power amplifier in the 75-90 GHz range with integrated output power detector has been designed and fabricated in a 0.1 μm GaAs pHEMT process. In-phase parallel combining is used in the last stages of the amplifier for increased output power and linearity. The chip exhibits 25 dB of gain and can deliver up to 19 dBm at the 1dB compression point, and 20 dBm when driven into saturation. The output third order intercept point (OIP3) of the amplifier is measured to be up to 29 dBm. The output voltage of the detector varies linearly by 1.5 V for 20 dB of output power range. The chip consumes less than 750 mW when fully driven into saturation and all transistors are biased with no more than 3.5 V for reliable operation.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"32 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113958217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A closed-form analysis of infinitely parallel coplanar waveguides","authors":"Teng-Kai Chen, G. Huff","doi":"10.1109/MWSYM.2013.6697366","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697366","url":null,"abstract":"This paper presents an analytical formula for quasi-static evaluation of even- and odd-mode characteristics of infinitely parallel coplanar waveguides. The analysis yields closed-form expressions based on the conformal mapping method and partial capacitance technique with quasi-TEM assumption. Calculated results show that both the even- and odd-mode characteristic impedances are in good agreements with the results generated by numerical solvers and available experimental data. The results are important especially for integrated circuit designs where unnecessary crosstalk between signal conductors could be a severe problem.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131390950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 31∼61 GHz linear transconductance up-conversion mixer with 15 GHz IF-bandwidth","authors":"M. Bao, Yinggang Li, H. Zirath","doi":"10.1109/MWSYM.2013.6697481","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697481","url":null,"abstract":"A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0.25 μm InP DHBT technology, which consists of a main and an auxiliary mixer. At large input power, the conversion gain compression of the main mixer is compensated by the gain expansion of the auxiliary mixer; consequently, the linearity of the combined two mixers is improved. The measured output referred 1-dB compression point, OP1dB, is -2.2 dBm to -0.57 dBm in the frequency range, which to the authors' knowledge, is the best obtained among the up-conversion mixers published so far. Moreover, the mixer also demonstrates a broad IF bandwidth of 0~15 GHz, supporting up-conversion of high datarate baseband signals.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127666243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An integrated multi-port driven radiating source","authors":"S. Bowers, A. Hajimiri","doi":"10.1109/MWSYM.2013.6697521","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697521","url":null,"abstract":"A multi-port driven (MPD) antenna allows for the removal of RF blocks for impedance matching, power combining, and power delivery by enabling efficient radiation at the fundamental frequency from several output stages driving the antenna. A radiating source utilizing an 8-phase ring oscillator and eight power amplifiers to drive the MPD antenna at 161.4 GHz with a total radiated power of -2 dBm and a single element EIRP of 4.6 dBm is demonstrated in silicon with single lobe radiation patterns closely matching simulation.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132678727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. A. Calvillo-Cortes, M. van der Heijden, L. D. de Vreede
{"title":"A 70W package-integrated class-E Chireix outphasing RF power amplifier","authors":"D. A. Calvillo-Cortes, M. van der Heijden, L. D. de Vreede","doi":"10.1109/MWSYM.2013.6697341","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697341","url":null,"abstract":"A high-power class-E Chireix outphasing RF power amplifier integrated inside a transistor package is described. The optimum class-E loading conditions and the Chireix compensation elements are provided to the active devices by a dedicated ultra-low loss bondwire-based transformer power combiner that enables a very small form factor and low cost. The realized prototype achieves 70.6 W peak power with 73% peak drain-efficiency at 2.3 GHz, and up to 81% peak drain-efficiency for slightly lower power at 2.2 GHz. When operated for maximum power, it reaches 53.5%/43.5% average drain-/total-efficiency for a 9.6 dB PAR W-CDMA signal at 2.3 GHz with low ACLR1/2 levels (-49/-56 dBc after memory-less DPD).","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132798890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Haslach, Daniel Markert, Andreas Frotzscher, A. Pascht
{"title":"New efficient architectures for RF pulse width modulators","authors":"C. Haslach, Daniel Markert, Andreas Frotzscher, A. Pascht","doi":"10.1109/MWSYM.2013.6697597","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697597","url":null,"abstract":"This paper presents new architectures for RF pulse width modulation (RF-PWM). They allow for very efficient and simple implementation of this class of modulators. Even for the 2.6-Ghz band, the modulator can now be built with standard components. The new concepts support binary and M-ary output alphabets. One variant is capable of generating M-ary RF-PWM signals by only deploying one switching device. The new architectures are derived analytically and are illustrated by simulation results. A recent hardware implementation of this concept proofs the efficiency of this approach.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"346 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134009937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"K-band energy harvesting for satellite application","authors":"A. Takacs, H. Aubert, L. Despoisse, S. Fredon","doi":"10.1109/MWSYM.2013.6697611","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697611","url":null,"abstract":"This paper addresses the energy harvesting for powering autonomous wireless sensors on board of geostationary broadcasting satellites. The electromagnetic environment existing on such satellites is first investigated and the feasibility of energy harvesting by using microwave harvesting modules is discussed. The proof-of-concept experiment in K-band demonstrates for the first time the feasibility of such energy harvesting in satellite applications for powering autonomous wireless sensors.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131842094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Scott, C. Nordquist, J. Custer, D. Leonhardt, T. Jordan, C. Rodenbeck
{"title":"Band-selective interferer rejection for cognitive receiver protection","authors":"S. Scott, C. Nordquist, J. Custer, D. Leonhardt, T. Jordan, C. Rodenbeck","doi":"10.1109/MWSYM.2013.6697637","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697637","url":null,"abstract":"The concept for a new, frequency-selective limiting filter is presented. This is accomplished by placing a phase change vanadium dioxide (VO2) film at the proper node of the filter. When the high-powered microwave signal reaches a certain threshold, the VO2 undergoes a phase transition from the monoclinic “insulator state” to the tetragonal “metallic state”. This crystallographic change is accompanied by a 3 order of magnitude drop in the film's resistivity, and creates a short circuit at a section of the filter, changing a pole to a zero, and rejecting further undesirable high-powered signals from damaging sensitive receiver components. This paper details the design and simulation of the filter, along with measurement results from VO2 films and the filter element. This filter element begins rejecting at about 2 W input power, with isolation of over 16 dB to over 23 W input power, and is unaffected by an out-of band interferer of over 25 W. The architecture presented allows for filter banks capable of automatically-rejecting interferers, yet allowing signals of interest to pass.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134256356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}