D. A. Calvillo-Cortes, M. van der Heijden, L. D. de Vreede
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引用次数: 22
摘要
介绍了一种集成在晶体管封装内的大功率e类Chireix共相射频功率放大器。最佳的e级负载条件和Chireix补偿元件通过专用的超低损耗结合线变压器功率组合器提供给有源器件,使其具有非常小的外形尺寸和低成本。所实现的样机在2.3 GHz时峰值功率为70.6 W,峰值漏极效率为73%,在2.2 GHz时功耗略低,峰值漏极效率高达81%。当工作在最大功率时,它在2.3 GHz下为9.6 dB PAR W-CDMA信号提供低ACLR1/2电平(无内存DPD后为-49/-56 dBc),平均漏极/总效率达到53.5%/43.5%。
A 70W package-integrated class-E Chireix outphasing RF power amplifier
A high-power class-E Chireix outphasing RF power amplifier integrated inside a transistor package is described. The optimum class-E loading conditions and the Chireix compensation elements are provided to the active devices by a dedicated ultra-low loss bondwire-based transformer power combiner that enables a very small form factor and low cost. The realized prototype achieves 70.6 W peak power with 73% peak drain-efficiency at 2.3 GHz, and up to 81% peak drain-efficiency for slightly lower power at 2.2 GHz. When operated for maximum power, it reaches 53.5%/43.5% average drain-/total-efficiency for a 9.6 dB PAR W-CDMA signal at 2.3 GHz with low ACLR1/2 levels (-49/-56 dBc after memory-less DPD).