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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)最新文献

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A single-chip dual-mode CW/pulse electron paramagnetic resonance spectrometer in 0.13μm SiGe BiCMOS 0.13μm SiGe BiCMOS单芯片双模连续波/脉冲电子顺磁共振谱仪
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697718
Xuebei Yang, P. Seifi, A. Babakhani
{"title":"A single-chip dual-mode CW/pulse electron paramagnetic resonance spectrometer in 0.13μm SiGe BiCMOS","authors":"Xuebei Yang, P. Seifi, A. Babakhani","doi":"10.1109/MWSYM.2013.6697718","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697718","url":null,"abstract":"Microwave circuitry for electron paramagnetic resonance (EPR) spectroscopy is implemented in a 0.13μm SiGe BiCMOS process. The chip can operate in both continuous wave (CW) and pulse modes. The frequency is tunable from 770MHz to 970MHz, corresponding to Zeeman magnetic fields from 28mT to 35mT for a free electron. The CW-EPR absorption line of a DPPH powder sample is acquired. The chip consists of a VCO, a PA, an LNA, a down-conversion mixer, baseband amplifiers, and a pulse generation block.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126574321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An adaptive computer-aided design-and-tuning scheme for a predistorted filter with uneven-Q effect 一种具有非均匀q效应的预失真滤波器的自适应计算机辅助设计与调谐方案
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697535
Hai Hu, Ke-Li Wu
{"title":"An adaptive computer-aided design-and-tuning scheme for a predistorted filter with uneven-Q effect","authors":"Hai Hu, Ke-Li Wu","doi":"10.1109/MWSYM.2013.6697535","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697535","url":null,"abstract":"The predistorted filter, which can achieve a high equivalent Q-factor, begins to be adopted on the input multiplexer (IMUX) of a satellite payload system. This type of filter is built by low and likely uneven Q resonators. The design and tuning of such a predistorted filter is much more complicated than an ordinary high Q filter because the actual unloaded Q for each resonator will be only available at the tuning stage. Up to now, most designs are based on an equal Q assumption and very few published works have addressed the tuning procedure of such filters. In this paper, an adaptive design-and-tuning scheme for a predis-torted filter is given. An 8-pole predistorted dual-mode dielectric resonator filter is designed and tuned for demonstration purpose. This design-and-tuning scheme takes the stray couplings and the uneven Q factors into account. The finally realized filter achieves an equivalent Q of higher than 10,000 while the actual unloaded Q for each resonator ranges from 1,100 to 2,900.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126847102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The state-of-the-art in silicon-on-sapphire components for antenna tuning 用于天线调谐的最先进的蓝宝石硅组件
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697707
Brian Baxter, T. Ranta, M. Facchini, Dongjin Jung, D. Kelly
{"title":"The state-of-the-art in silicon-on-sapphire components for antenna tuning","authors":"Brian Baxter, T. Ranta, M. Facchini, Dongjin Jung, D. Kelly","doi":"10.1109/MWSYM.2013.6697707","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697707","url":null,"abstract":"Increased spectrum coverage by mobile wireless devices is dictating the need for active antenna systems. Silicon-on-Sapphire (SOS)-based Digitally Tunable Capacitors (DTCs) and switches enable tunable matching networks and dynamic adjustment of antenna electrical characteristics. Advancements in technology and design techniques have enabled improvements in DTC electrical performance. This paper addresses advancements in DTC and switch capabilities and the resulting improvements in antenna operating bandwidth.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"15 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114120096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Broadband millimeter-wave receiver front-ends in silicon-germanium technology for multi-band communication systems 多波段通信系统中宽带毫米波接收机前端的硅锗技术
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697542
I. Nasr, R. Weigel, D. Kissinger
{"title":"Broadband millimeter-wave receiver front-ends in silicon-germanium technology for multi-band communication systems","authors":"I. Nasr, R. Weigel, D. Kissinger","doi":"10.1109/MWSYM.2013.6697542","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697542","url":null,"abstract":"Millimeter-wave frequency-agile front-ends capable of operating at different frequency bands offer an attractive solution for multiband communications. In this paper we present a fully integrated wide-band quadrature receiver covering the two point to point communication bands from 71 to 76 GHz and 81 to 86 GHz and the automotive radar band at 77 GHz. The receiver was fabricated using a low-cost SiGe technology with an ft/fmax of 200/250 GHz. The chip contains a wide-band LNA, Wilkinson power divider, down conversion mixers, two stage polyphase network, VCO, and frequency prescaler. The VCO achieves an ultra high tuning range of 33% between 64 and 89 GHz. Each receiver path (I/Q) has a measured conversion gain between 17 to 23 dB over the operating frequency range. The receiver has a minimum NF of 8dB, and an input referred compression point of -22 dBm. The complete chip consumes 220mA of current from a 3.3 V supply.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115300115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 60 GHz low noise amplifier with built-in linearizer 内置线性放大器的60 GHz低噪声放大器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697369
Chun-An Hsieh, Yu-Hsuan Lin, Yuan-Hung Hsiao, Huei Wang
{"title":"A 60 GHz low noise amplifier with built-in linearizer","authors":"Chun-An Hsieh, Yu-Hsuan Lin, Yuan-Hung Hsiao, Huei Wang","doi":"10.1109/MWSYM.2013.6697369","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697369","url":null,"abstract":"A 57 to 66 GHz low noise amplifier (LNA) with built-in linearizer using 65-nm CMOS technology is presented in this paper. The source-sensed derivative superposition technique is applied to improve the linearity of the LNA at high frequency. The measurement results show that linearized LNA achieves 24 dB gain and 4.5 dB noise figure in the band of interest. Based on the proposed methodology, the improvement of IM3 is 14 dB at 60 GHz. This high linearity LNA is suitable for high data rate transmission application.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"21 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116538896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Time-coded chipless RFID temperature sensor with self-calibration based on a Vivaldi antenna 基于维瓦尔第天线的时间编码无芯片RFID温度传感器自校准
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697445
A. Ramos, D. Girbau, A. Lázaro, R. Villarino
{"title":"Time-coded chipless RFID temperature sensor with self-calibration based on a Vivaldi antenna","authors":"A. Ramos, D. Girbau, A. Lázaro, R. Villarino","doi":"10.1109/MWSYM.2013.6697445","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697445","url":null,"abstract":"This paper proposes a radio frequency identification (RFID) sensor based on an ultra-wide band (UWB) Vivaldi antenna loaded with two transmission lines. The time-domain response is composed by a structural and two tag (or antenna) mode reflections. Each transmission line generates its own tag mode. One tag mode is used to sense temperature, and the other is used to calibrate the sensor. Experimental results obtained with two reader approaches are presented to validate the system.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116612217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Wide spurious free range positive-to-negative inter-resonator coupling structure for reconfigurable filters 可重构滤波器的宽杂散自由范围正负腔间耦合结构
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697463
E. Naglich, D. Peroulis, W. Chappell
{"title":"Wide spurious free range positive-to-negative inter-resonator coupling structure for reconfigurable filters","authors":"E. Naglich, D. Peroulis, W. Chappell","doi":"10.1109/MWSYM.2013.6697463","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697463","url":null,"abstract":"A structure for positive-to-negative inter-resonator coupling in cavity resonator filters is shown in this paper. Mechanically and electrically reconfigurable versions of the structure are described. The structure has a wide spurious free range while retaining the capability to provide near-zero coupling because it uses symmetry to redirect digitally addressable amounts of current to adjust coupling values instead of using the phase shift through a resonance. It is applied to 6-resonator cross-coupled filters whose response can be adjusted between several different orders and shapes, including shapes with and without transmission zeros. A technique for improving the near-zero coupling state is also presented.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116716087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A 2×2 W-band reference time-shifted phase-locked transmitter array in 65nm CMOS technology 一种2×2 w波段参考时移锁相发射阵列，采用65nm CMOS技术
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697387
A. Tang, G. Virbila, F. Hsiao, Hao Wu, D. Murphy, I. Mehdi, P. Siegel, M. Chang
{"title":"A 2×2 W-band reference time-shifted phase-locked transmitter array in 65nm CMOS technology","authors":"A. Tang, G. Virbila, F. Hsiao, Hao Wu, D. Murphy, I. Mehdi, P. Siegel, M. Chang","doi":"10.1109/MWSYM.2013.6697387","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697387","url":null,"abstract":"This paper presents a complete 2×2 phased array transmitter system operating at W-band (90-95 GHz) which employs a PLL reference time-shifting approach instead of using traditional mm-wave phase shifters. PLL reference shifting enables a phased array to be distributed over multiple chips without the need for coherent mm-wave signal distribution between chips. The proposed phased array transmitter system consumes 248 mW per array element when implemented in a 65 nm CMOS technology.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123817439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low Loss, Cu damascene interconnects and passives compatible with GaN MMIC 低损耗，铜大马士革互连和无源兼容GaN MMIC
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697331
A. Margomenos, M. Micovic, C. Butler, B. Holden, D. Chang, C. Mcguire, D. Chow
{"title":"Low Loss, Cu damascene interconnects and passives compatible with GaN MMIC","authors":"A. Margomenos, M. Micovic, C. Butler, B. Holden, D. Chang, C. Mcguire, D. Chow","doi":"10.1109/MWSYM.2013.6697331","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697331","url":null,"abstract":"We report a Cu damascene process on multi-layer benzocyclobutene (BCB) dielectrics compatible with GaN MMICs that enables the creation of low-loss, high power handling and high current carrying interconnects. The reported process uses two thick Cu traces (7 μm and 3 μm) and two supplemental Au layers. 7 μm thick Cu traces with width and pitch of 4 μm were realized. Reported circuits showed 0.11 dB/mm loss at 50 GHz, inductor Q-factors of 30 and 57, 3:1 planar balun with less than 2 dB insertion loss, 100% yielding RF and DC via chains.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121481468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microstrip to buried waveguide probe feeds for V- and W-band in LTCC technology LTCC技术中V波段和w波段微带到埋地波导探针馈电
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697562
I. Ocket, W. De Raedt, B. Nauwelaers
{"title":"Microstrip to buried waveguide probe feeds for V- and W-band in LTCC technology","authors":"I. Ocket, W. De Raedt, B. Nauwelaers","doi":"10.1109/MWSYM.2013.6697562","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697562","url":null,"abstract":"This paper reports on V- and W-band uniplanar probe feeds from microstrip to buried substrate integrated waveguide (SIW) in LTCC technology. For the V- and W-band designs respectively, the measured mid-band insertion loss is 0.24 dB and 0.47 dB with relative bandwidths of 40% and 27 %. The measured average waveguide attenuation is 0.057 dB/mm for V-band and 0.15 dB/mm for W-band. These feeds enable very compact integration of low-loss antenna feed networks, LO distribution networks, etc.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116597653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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