A 60 GHz low noise amplifier with built-in linearizer

Abstract

A 57 to 66 GHz low noise amplifier (LNA) with built-in linearizer using 65-nm CMOS technology is presented in this paper. The source-sensed derivative superposition technique is applied to improve the linearity of the LNA at high frequency. The measurement results show that linearized LNA achieves 24 dB gain and 4.5 dB noise figure in the band of interest. Based on the proposed methodology, the improvement of IM3 is 14 dB at 60 GHz. This high linearity LNA is suitable for high data rate transmission application.