A. Margomenos, M. Micovic, C. Butler, B. Holden, D. Chang, C. Mcguire, D. Chow
{"title":"低损耗，铜大马士革互连和无源兼容GaN MMIC","authors":"A. Margomenos, M. Micovic, C. Butler, B. Holden, D. Chang, C. Mcguire, D. Chow","doi":"10.1109/MWSYM.2013.6697331","DOIUrl":null,"url":null,"abstract":"We report a Cu damascene process on multi-layer benzocyclobutene (BCB) dielectrics compatible with GaN MMICs that enables the creation of low-loss, high power handling and high current carrying interconnects. The reported process uses two thick Cu traces (7 μm and 3 μm) and two supplemental Au layers. 7 μm thick Cu traces with width and pitch of 4 μm were realized. Reported circuits showed 0.11 dB/mm loss at 50 GHz, inductor Q-factors of 30 and 57, 3:1 planar balun with less than 2 dB insertion loss, 100% yielding RF and DC via chains.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low Loss, Cu damascene interconnects and passives compatible with GaN MMIC\",\"authors\":\"A. Margomenos, M. Micovic, C. Butler, B. Holden, D. Chang, C. Mcguire, D. Chow\",\"doi\":\"10.1109/MWSYM.2013.6697331\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a Cu damascene process on multi-layer benzocyclobutene (BCB) dielectrics compatible with GaN MMICs that enables the creation of low-loss, high power handling and high current carrying interconnects. The reported process uses two thick Cu traces (7 μm and 3 μm) and two supplemental Au layers. 7 μm thick Cu traces with width and pitch of 4 μm were realized. Reported circuits showed 0.11 dB/mm loss at 50 GHz, inductor Q-factors of 30 and 57, 3:1 planar balun with less than 2 dB insertion loss, 100% yielding RF and DC via chains.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697331\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Loss, Cu damascene interconnects and passives compatible with GaN MMIC
We report a Cu damascene process on multi-layer benzocyclobutene (BCB) dielectrics compatible with GaN MMICs that enables the creation of low-loss, high power handling and high current carrying interconnects. The reported process uses two thick Cu traces (7 μm and 3 μm) and two supplemental Au layers. 7 μm thick Cu traces with width and pitch of 4 μm were realized. Reported circuits showed 0.11 dB/mm loss at 50 GHz, inductor Q-factors of 30 and 57, 3:1 planar balun with less than 2 dB insertion loss, 100% yielding RF and DC via chains.
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