x波段MMIC GaN功率放大器设计用于高效率的供应调制发射机

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697435

S. Schafer, M. Litchfield, Andrew H. Zai, Z. Popovic, C. Campbell

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引用次数: 36

摘要

介绍了采用0.15μm GaN on SiC工艺的x波段功率放大器mmic的设计和性能测试。在连续波工作条件下，这些单级和2级mmic的峰值功率增加效率(PAE)为45%至69%，输出功率为2.5-13W，大信号增益高达20dB。该功率放大器专为漏极调制应用而设计，在降低漏极偏置电压的情况下保持良好的性能。当漏极偏置在7.5V到20V之间变化时，两级MMIC的输出功率可以在2W到13W之间变化，同时PAE保持在54%以上。

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X-band MMIC GaN power amplifiers designed for high-efficiency supply-modulated transmitters

The design and measured performance of X-band power amplifier MMICs that utilize 0.15μm GaN on SiC process technology are presented. Under continuous wave operating conditions these single and 2-stage MMICs demonstrate peak power added efficiencies (PAE) from 45% to 69%, output powers from 2.5-13W, and up to 20dB of large signal gain. Designed for drain modulated applications, the power amplifiers maintain good performance at reduced drain bias voltage. The output power of the two stage MMIC can be varied from 2W to 13W when the drain bias is varied between 7.5V and 20V while maintaining a PAE above 54%.

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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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