Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697403

Philippe Dennler, R. Quay, O. Ambacher

{"title":"Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology","authors":"Philippe Dennler, R. Quay, O. Ambacher","doi":"10.1109/MWSYM.2013.6697403","DOIUrl":null,"url":null,"abstract":"This paper reports on a novel broadband amplifier architecture suitable for wide bandwidth applications such as electronic warfare systems. The proposed topology comprises a distributed active power splitter to function as a driver stage for a reactively-matched power amplifier. As a result, a purely resistive interstage impedance is obtained and therefore the proposed architecture allows wider bandwidth operation as compared to the conventional reactively-matched multistage topology. Due to the traveling wave amplifier character of the driver stage, the presented novel amplifier topology is named semi-reactively-matched amplifier. A 6GHz to 20GHz dualstage high power amplifier MMIC is designed and realized in order to demonstrate the capabilities of the new concept. The MMIC is based on a 0.25μm gate length AlGaN/GaN HEMT microstrip transmission line technology. It shows a measured small-signal gain of (18 ± 4)dB over the entire frequency range. The saturated output power is higher than 4.5W at 20GHz in continuous wave operation.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

Abstract

This paper reports on a novel broadband amplifier architecture suitable for wide bandwidth applications such as electronic warfare systems. The proposed topology comprises a distributed active power splitter to function as a driver stage for a reactively-matched power amplifier. As a result, a purely resistive interstage impedance is obtained and therefore the proposed architecture allows wider bandwidth operation as compared to the conventional reactively-matched multistage topology. Due to the traveling wave amplifier character of the driver stage, the presented novel amplifier topology is named semi-reactively-matched amplifier. A 6GHz to 20GHz dualstage high power amplifier MMIC is designed and realized in order to demonstrate the capabilities of the new concept. The MMIC is based on a 0.25μm gate length AlGaN/GaN HEMT microstrip transmission line technology. It shows a measured small-signal gain of (18 ± 4)dB over the entire frequency range. The saturated output power is higher than 4.5W at 20GHz in continuous wave operation.

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GaN技术中用于单片集成电路的新型半无功匹配多级宽带功率放大器结构

本文报道了一种适用于电子战系统等宽带应用的新型宽带放大器结构。所提出的拓扑结构包括一个分布式有源功率分配器，作为无功匹配功率放大器的驱动级。因此，获得了纯电阻级间阻抗，因此与传统的反应匹配多级拓扑结构相比，所提出的架构允许更宽的带宽操作。由于驱动级的行波放大特性，提出的新型放大器拓扑被命名为半无功匹配放大器。设计并实现了一个6GHz至20GHz双级高功率放大器MMIC，以展示新概念的能力。MMIC基于0.25μm栅长AlGaN/GaN HEMT微带传输线技术。它显示在整个频率范围内测量的小信号增益为(18±4)dB。在20GHz连续波工作下，饱和输出功率大于4.5W。

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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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