A. Tang, K. Cooper, R. Dengler, N. Llombart, P. Siegel
{"title":"Automatic focusing for a 675 GHz imaging radar with target standoff distances from 14 to 34 meters","authors":"A. Tang, K. Cooper, R. Dengler, N. Llombart, P. Siegel","doi":"10.1109/MWSYM.2013.6697342","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697342","url":null,"abstract":"This paper discusses the issue of limited focal depth for high-resolution imaging radar operating over a wide range of standoff distances. We describe a technique for automatically focusing a THz imaging radar system using translational optics combined with range estimation based on a reduced chirp bandwidth setting. The demonstrated focusing algorithm estimates the correct focal depth for desired targets in the field of view at unknown standoffs and in the presence of clutter to provide good imagery at 14 to 30 meters of standoff.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Modeling and experimental test of effective dielectric constant of multilayer substrate with periodic metal inclusion","authors":"Teng Zhao, Jiming Song, T. Kamgaing","doi":"10.1109/MWSYM.2013.6697651","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697651","url":null,"abstract":"This paper applies a novel integral equation approach to model the multilayer substrate with periodic metal inclusion. The approach combines the equivalence principle with connection scheme to avoid the sophisticated multilayered periodic Green's function. Effective media theory is adopted to extract the effective dielectric constant. Good agreement has been achieved between our approach and analytical result. A printed circuit board was designed, fabricated and tested to validate our model.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133848462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniaturized dual-mode microstrip bandpass filter with a reconfigurable notched band for UWB applications","authors":"K. Rabbi, D. Budimir","doi":"10.1109/MWSYM.2013.6697586","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697586","url":null,"abstract":"A novel, compact, and highly selective dual-mode microstrip bandpass filter with a switchable notched band is presented. A notched band is developed by employing an open-circuited stub which can be switched by a pin diode to avoid WLAN interferences (5.8 GHz) within the spectrum. The proposed filter achieves a significant size reduction (8.5 mm × 7.1 mm) as compared to conventional dual-mode filters with notched band. Simulated and experimental results of the designed filter were presented.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115775307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Metamaterial Huygens' surfaces","authors":"C. Pfeiffer, A. Grbic","doi":"10.1109/MWSYM.2013.6697552","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697552","url":null,"abstract":"A rigorous formulation of Huygens principle is applied to develop designer surfaces that provide extreme control of electromagnetic wavefronts across electrically-thin layers. These reflectionless surfaces, referred to as metamaterial Huygens surfaces, are realized with electric and magnetic sheet impedances that provide the necessary surface currents to generate prescribed wavefronts. A straightforward design methodology is demonstrated, and applied to develop a beam-refracting surface.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124402853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of a magnetization gradient ferrite substrate integrated waveguide isolator to mitigate higher order mode effects","authors":"S. Beguhn, Xi Yang, N. Sun","doi":"10.1109/MWSYM.2013.6697697","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697697","url":null,"abstract":"We demonstrate a new magnetization gradient ferrite approach to mitigate the insertion loss degradation effects of higher order modes in a substrate integrated waveguide isolator. Using a layered gradient magnetization ferrite structure to form a saturation magnetization profile, insertion losses were decreased. Measured insertion losses of the gradient isolator were ~0.1-1 dB compared to 2-4 dB of insertion loss using the nominal isolator. Both simulated and measured results are shown.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124523149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Regenerative sampling self-mixing receiver: A novel concept for low complexity phase demodulation","authors":"C. Carlowitz, A. Esswein, R. Weigel, M. Vossiek","doi":"10.1109/MWSYM.2013.6697569","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697569","url":null,"abstract":"In this paper, a novel low complexity receiver concept for high-order differential phase demodulation is introduced for the first time. With a first hardware demonstrator, a high data rate of 300 Mbit/s is achieved without requiring a synthesizer for downconversion. A phase sensitive regenerative sampling approach is employed that integrates both low noise amplifier and automatic gain control using a free running switched injection-locked oscillator with no need for stabilization by a phase locked loop. Differential phase detection is achieved by quadrature self-mixing the regenerated signal with one path delayed by the symbol period. This approach is particularly attractive in combination with the switched injection-locked oscillator due to its constant high output power that allows for matching the mixer's best operating point. The proposed concept is demonstrated at 5.5 GHz with 8th order differential phase shift keying and a symbol rate of 100 MBaud/s. A short range data rate of 300 Mbit/s is achieved at a bit error rate below 1e-3.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114446833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"F-band frequency octupler in 0.13-μm SiGe:C BiCMOS with 2 mW output power","authors":"V. Valenta, S. Yuan, A. Trasser, H. Schumacher","doi":"10.1109/MWSYM.2013.6697541","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697541","url":null,"abstract":"This paper presents design, implementation and measurement results of a high performance F-band frequency octupler (multiplier by eight) implemented in a 0.13-μm SiGe:C BiCMOS process. The multiplier cascades three Gilbert squarers with tuned loads. The realized chip incorporates an active balun together with a Limiting Amplifier (LA) at the input of the multiplier and a 140 GHz differential Power Amplifier (PA) designed to improve output balance. Full operational bandwidth of 20 GHz and maximum output power of 3 dBm is achieved for input power as low as -23 dBm while consuming 178 mW of DC power. The output power can be adjusted from -5 to 3 dBm. Suppression of undesired harmonic tones within the covered band is also adjustable and can be better than 25 dB. To the best of authors' knowledge, this is the first demonstration of this approach applied in this frequency range.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114517833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jun-Chau Chien, M. Anwar, E. Yeh, Luke P. Lee, A. Niknejad
{"title":"A 1–50 GHz dielectric spectroscopy biosensor with integrated receiver front-end in 65nm CMOS","authors":"Jun-Chau Chien, M. Anwar, E. Yeh, Luke P. Lee, A. Niknejad","doi":"10.1109/MWSYM.2013.6697466","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697466","url":null,"abstract":"In this paper, an on-chip transmission-line sensor with integrated receiver front-end implemented in 65nm CMOS facilitates the measurement of complex permittivity from 1 to 50 GHz for liquid samples. A robust extraction model allows accurate prediction of sample permittivity based on reference liquid calibration and eases the design of the hardware. Front-end circuits include a 60 GHz distributed amplifier with noise-cancellation active termination to improve the noise figure below 18 GHz. Correlated-double-sampling technique is used in the measurement setup to reject system phase drift. The sensor achieves 1% permittivity sensitivity at 20 GHz through liquid measurements with a minimum sensing volume of 0.09 nL. The prototype chip consumes a total power of 114 mW.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114682584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High efficiency feedforward power amplifier using a nonlinear error amplifier and offset alignment control","authors":"R. Braithwaite, A. Khanifar","doi":"10.1109/MWSYM.2013.6697336","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697336","url":null,"abstract":"A high efficiency feedforward power amplifier (FFPA) is proposed that uses the Doherty configuration for the both the main amplifier (MA) and error amplifier (EA). Using a nonlinear EA is a deviation from the traditional FFPA. A loop control algorithm is proposed that offsets the alignment setting from the standard value to best utilize the power handling capability and linearity of the MA and EA. A system efficiency of 25% is achieved for a rated output power of 52.7 dBm, while exceeding the WCDMA specifications. Reducing the peak-to-average power ratio (PAPR) of the input signal to 8 dB and using offset control improves the ACLR performance to -62 dBc.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117045148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Tango, T. Hashinaga, K. Totani, H. Kuriyama, Y. Hamada, T. Asaina
{"title":"A 60% efficient envelope tracking power amplifier for 40W, 2.6GHz LTE base station with in/output harmonic tuning","authors":"H. Tango, T. Hashinaga, K. Totani, H. Kuriyama, Y. Hamada, T. Asaina","doi":"10.1109/MWSYM.2013.6697761","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697761","url":null,"abstract":"This paper presents the results of the development of a highly efficient GaN HEMT-based envelope tracking (ET) Class-E power amplifier (PA) for 2.6GHz LTE base stations. This PA incorporates a unique harmonic tuning technique at both input and output to perform a wide frequency range operation. The fabricated internally-matched PA module exhibited a saturation output power level of 200W with 74% drain efficiency and 15dB gain. In combination with an ET modulator and digital pre-distorter (DPD), it was confirmed that our ET PA can achieve an average efficiency of over 60% and an adjacent carrier leakage ratio of -49dBc, which is, to the best of author's knowledge, the best performance of 2.6GHz LTE base station with a 40W average output power level. In the measurements, two carriers with 10MHz band LTE signal across 2.62-2.69GHz were used, where the peak to average power ratio (PAPR) was 6.5dB.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116252401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}