用于40W, 2.6GHz LTE基站的60%效率包络跟踪功率放大器,具有输入/输出谐波调谐

H. Tango, T. Hashinaga, K. Totani, H. Kuriyama, Y. Hamada, T. Asaina
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引用次数: 9

摘要

本文介绍了一种用于2.6GHz LTE基站的高效GaN hemt包络跟踪(ET) e类功率放大器(PA)的开发结果。该扩音器在输入和输出都采用了独特的谐波调谐技术,以执行宽频率范围的操作。所制备的内部匹配PA模块的饱和输出功率为200W,漏极效率为74%,增益为15dB。结合ET调制器和数字预失真器(DPD),证实了我们的ET PA平均效率超过60%,相邻载波漏比为-49dBc,据笔者所知,这是2.6GHz LTE基站在平均输出功率为40W时的最佳性能。在测量中,使用了两个载波,10MHz频段LTE信号跨越2.62-2.69GHz,峰值平均功率比(PAPR)为6.5dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 60% efficient envelope tracking power amplifier for 40W, 2.6GHz LTE base station with in/output harmonic tuning
This paper presents the results of the development of a highly efficient GaN HEMT-based envelope tracking (ET) Class-E power amplifier (PA) for 2.6GHz LTE base stations. This PA incorporates a unique harmonic tuning technique at both input and output to perform a wide frequency range operation. The fabricated internally-matched PA module exhibited a saturation output power level of 200W with 74% drain efficiency and 15dB gain. In combination with an ET modulator and digital pre-distorter (DPD), it was confirmed that our ET PA can achieve an average efficiency of over 60% and an adjacent carrier leakage ratio of -49dBc, which is, to the best of author's knowledge, the best performance of 2.6GHz LTE base station with a 40W average output power level. In the measurements, two carriers with 10MHz band LTE signal across 2.62-2.69GHz were used, where the peak to average power ratio (PAPR) was 6.5dB.
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