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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)最新文献

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Specific Absorption Rate (SAR) evaluation of biomedical telemetry textile antennas 生物医学遥测纺织天线的比吸收率(SAR)评价
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697587
Ping Jack Soh, G. Vandenbosch, F. H. Wee, A. Bosch, Marta Martinez-Vazquez, Dominique Schreurs
{"title":"Specific Absorption Rate (SAR) evaluation of biomedical telemetry textile antennas","authors":"Ping Jack Soh, G. Vandenbosch, F. H. Wee, A. Bosch, Marta Martinez-Vazquez, Dominique Schreurs","doi":"10.1109/MWSYM.2013.6697587","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697587","url":null,"abstract":"This investigation aims at determining the Specific Absorption Rates (SARs) of textile antennas for on-body biomedical telemetry applications. The dual-band antennas are designed to operate at 2.4 GHz and 5.2 GHz with unidirectional radiations and broad bandwidths. Fractal Planar Inverted-F Antennas (F-PIFAs) are fabricated using different materials to assess factors influencing SAR levels. Simulations and measurements indicated a maximum SAR and uncertainty of 0.6 W/kg and 10%, respectively.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"34 15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116279282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Ferrite-based phase shifters design: The modeling problem of non-saturated anisotropic ferrites 基于铁氧体的移相器设计:非饱和各向异性铁氧体的建模问题
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697575
Armel Le Gouellec, G. Verissimo, P. Quéffélec, V. Laur, I. Albert, Thierry Girard
{"title":"Ferrite-based phase shifters design: The modeling problem of non-saturated anisotropic ferrites","authors":"Armel Le Gouellec, G. Verissimo, P. Quéffélec, V. Laur, I. Albert, Thierry Girard","doi":"10.1109/MWSYM.2013.6697575","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697575","url":null,"abstract":"Modeling the microwave behavior of ferrite in a non-saturated state is a burning issue for ferrite phase shifter designers. In this paper, a WR-90 waveguide loaded by a ferrite slab is studied. Classical simulations, using the Polder tensor, are not consistent with the measurements even in the case of a totally saturated state. An improvement was observed by using a generalized permeability tensor model, enhanced by taking into account an extra dynamic demagnetizing field.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116293730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
An iterative pruning of 2-D digital predistortion model based on normalized polynomial terms 基于归一化多项式项的二维数字预失真模型的迭代剪枝
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697513
Silong Zhang, Wen-hua Chen, F. Ghannouchi, Yaqin Chen
{"title":"An iterative pruning of 2-D digital predistortion model based on normalized polynomial terms","authors":"Silong Zhang, Wen-hua Chen, F. Ghannouchi, Yaqin Chen","doi":"10.1109/MWSYM.2013.6697513","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697513","url":null,"abstract":"This paper proposes a new method to prune the kernels of 2-D digital preditortion (2-D-DPD) model. The conventional 2-D-DPD model is rewritten as a new form with each of the polynomial terms normalized for further pruning. Then an iteration based characterization process is taken to prune the terms of the model. Two experiments on different PAs were taken to verify the method. Both of them prove the proposed method works effectively to prune the terms of 2-D-DPD model without losing modeling precision. The numbers of coefficients in the model were reduced from 24 to 9 and from 30 to 13 while only about 1dB adjacent channel power ratio (ACPR) and 1dB normalized mean square error (NMSE) were sacrificed.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123474785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A semi-empirical large-signal compact model for RF carbon nanotube field-effect transistors 射频碳纳米管场效应晶体管的半经验大信号紧凑模型
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697679
M. Schroter, M. Haferlach, P. Sakalas, M. Claus
{"title":"A semi-empirical large-signal compact model for RF carbon nanotube field-effect transistors","authors":"M. Schroter, M. Haferlach, P. Sakalas, M. Claus","doi":"10.1109/MWSYM.2013.6697679","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697679","url":null,"abstract":"A new compact large-signal model for CNTFETs is presented. The model is oriented towards practical requirements for RF analog circuit design, thus overcoming accuracy and discontinuity issues of existing models. Due to the difficulties of obtaining a compact analytical solution for the Landauer equation as well as for the injected and accumulated charge on the tube, a semi-empirical formulation for the drain current and tube charge has been developed. The complete model is scalable towards multi-tube multi-finger RF CNTFET structures and includes the effects of metallic tubes, contact resistances, parasitic capacitances, self-heating and hysteresis. Experimental verification of the model is shown based on pulsed DC and RF measurements.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123648552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 234–248 GHz power efficient fundamental VCO using 32 nm CMOS SOI technology 采用32nm CMOS SOI技术的234-248 GHz功率高效基频压控振荡器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697398
Naftali Landsberg, E. Socher
{"title":"A 234–248 GHz power efficient fundamental VCO using 32 nm CMOS SOI technology","authors":"Naftali Landsberg, E. Socher","doi":"10.1109/MWSYM.2013.6697398","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697398","url":null,"abstract":"A 240 GHz fundamental oscillator is demonstrated using the IBM CMOS SOI 32 nm process. The design was based on a Colpitts differential topology, where the gate capacitance of the device is used as a part of the inductor-capacitor tank for tuning. A peak output power level of 0.2 mW (-7 dBm) was achieved, while the total power consumption was 13 mW, reaching a record power efficiency of 1.5 %. A tuning bandwidth of 11 GHz was achieved by changing the gate bias level, while a total tuning range of 13.5 GHz was achieved by controlling both the gate and the drain bias. The design consumes a core area of only 50×80 μm2 and requires no buffer to drive the external 50 Ω termination.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121894031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Intermodulation distortion in MEMS capacitive switches under high RF power 高射频功率下MEMS电容开关的互调失真
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697357
D. Molinero, C. Palego, X. Luo, Y. Ning, G. Ding, J. Hwang, C. L. Goldmisth
{"title":"Intermodulation distortion in MEMS capacitive switches under high RF power","authors":"D. Molinero, C. Palego, X. Luo, Y. Ning, G. Ding, J. Hwang, C. L. Goldmisth","doi":"10.1109/MWSYM.2013.6697357","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697357","url":null,"abstract":"Intermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122065598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the stability of non-foster monopole antenna arrays 非培养单极天线阵列的稳定性
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697673
C. White, Chan-Tang Tsen
{"title":"On the stability of non-foster monopole antenna arrays","authors":"C. White, Chan-Tang Tsen","doi":"10.1109/MWSYM.2013.6697673","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697673","url":null,"abstract":"Non-Foster circuits (NFCs) promise to improve the gain of electrically-small and superdirective antenna arrays by at least 10x by cancelling the self and mutual reactances over wide bandwidths, thereby overcoming the Fano limit. To the authors' knowledge, however, there are no reports of NFCs being successfully integrated into antenna arrays. A 2-element monopole array (length and spacing 15 and 3 cm respectively) whose self and mutual reactance is substantially cancelled over 10-300 MHz employing three negative-capacitance NFCs has been realized. The NFCs are integrated into a single integrated circuit that consumes 50 mW of DC power. The analytical stability model is consistent with the experimental data, demonstrating that series and interelement NFCs are necessary to cancel the reactance of both the even and odd modes.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122100732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Terahertz focal plane arrays employing heterostructure backward diodes integrated with folded dipole antennas 采用反向异质二极管与折叠偶极子天线集成的太赫兹焦平面阵列
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697648
S. Rahman, Zhenguo Jiang, Yi Xie, H. Xing, P. Fay, Lei Liu
{"title":"Terahertz focal plane arrays employing heterostructure backward diodes integrated with folded dipole antennas","authors":"S. Rahman, Zhenguo Jiang, Yi Xie, H. Xing, P. Fay, Lei Liu","doi":"10.1109/MWSYM.2013.6697648","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697648","url":null,"abstract":"In this paper, we present the design, simulation, fabrication and initial characterization results of terahertz (THz) focal plane arrays (FPAs) employing Sb-based heterostructure backward diodes (HBDs) integrated with lens-coupled folded-dipole antennas (FDAs). For single array element design, FDAs with high embedding-impedances have been designed for impedance matching to HBDs without additional matching network. Under impedance matching conditions, a maximum detector responsivity of ~21,000 V/W could be obtained for single array pixel at 200 GHz. In order to expand the single element design into full 2-D THz FPAs, the off-axis radiation patterns of the FDA mounted on an extended hemispherical silicon lens have been analyzed using the ray tracing technique. In addition, mutual coupling between two adjacent FDAs has been studied using full-wave simulation. The above results along with initial array fabrication and device characterization results have demonstrated the potential to achieve room-temperature, high-performance and large-scale FPAs for THz imaging applications.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122144771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A triple-stacked Class-E mm-wave SiGe HBT power amplifier 一种三堆叠e类毫米波SiGe HBT功率放大器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697457
K. Datta, J. Roderick, H. Hashemi
{"title":"A triple-stacked Class-E mm-wave SiGe HBT power amplifier","authors":"K. Datta, J. Roderick, H. Hashemi","doi":"10.1109/MWSYM.2013.6697457","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697457","url":null,"abstract":"A Q-band, single ended, two-stage, triple-stacked, Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. The Class-E amplifier comprises of three series-stacked HBTs with capacitive divider networks at the HBT bases and collectors to ensure proper large signal swing and beyond BVCEO operation at mm-wave frequencies. The measured performance of the fabricated chip show 22.2 dBm maximum output power at 20.8% peak power added efficiency, and 15.4 dB of power gain across 4 GHz centered around 40 GHz for a supply voltage of 6.5 V. The total chip area including the pads is 0.8 mm × 1.28 mm.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129470931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
60GHz Double-balanced drain-pumped up-conversion mixer using 90nm CMOS 采用90nm CMOS的60GHz双平衡漏泵浦上转换混频器
2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI: 10.1109/MWSYM.2013.6697559
I. Song, Jaejin Lee, C. Byeon, S. Cho, H. Kim, I. Oh, C. Park
{"title":"60GHz Double-balanced drain-pumped up-conversion mixer using 90nm CMOS","authors":"I. Song, Jaejin Lee, C. Byeon, S. Cho, H. Kim, I. Oh, C. Park","doi":"10.1109/MWSYM.2013.6697559","DOIUrl":"https://doi.org/10.1109/MWSYM.2013.6697559","url":null,"abstract":"A new type of drain-pumped mixer is proposed for a 60 GHz direct up-conversion using a standard 90nm CMOS process in this paper. Because no stacks are needed for the architecture, a high conversion gain (CG) thanks to high trans-conductance (gm) can be achieved while consuming low power. By configuring a balanced architecture for LO-to-RF isolation, the proposed mixer demonstrates CG of -5.1dB with a reasonable 0dBm LO power while maintaining low power dissipation of 16.3mW. Its LO-to-RF isolation is better than 30dB and size is only 0.35mm2.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128295020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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