{"title":"一种三堆叠e类毫米波SiGe HBT功率放大器","authors":"K. Datta, J. Roderick, H. Hashemi","doi":"10.1109/MWSYM.2013.6697457","DOIUrl":null,"url":null,"abstract":"A Q-band, single ended, two-stage, triple-stacked, Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. The Class-E amplifier comprises of three series-stacked HBTs with capacitive divider networks at the HBT bases and collectors to ensure proper large signal swing and beyond BVCEO operation at mm-wave frequencies. The measured performance of the fabricated chip show 22.2 dBm maximum output power at 20.8% peak power added efficiency, and 15.4 dB of power gain across 4 GHz centered around 40 GHz for a supply voltage of 6.5 V. The total chip area including the pads is 0.8 mm × 1.28 mm.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A triple-stacked Class-E mm-wave SiGe HBT power amplifier\",\"authors\":\"K. Datta, J. Roderick, H. Hashemi\",\"doi\":\"10.1109/MWSYM.2013.6697457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Q-band, single ended, two-stage, triple-stacked, Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. The Class-E amplifier comprises of three series-stacked HBTs with capacitive divider networks at the HBT bases and collectors to ensure proper large signal swing and beyond BVCEO operation at mm-wave frequencies. The measured performance of the fabricated chip show 22.2 dBm maximum output power at 20.8% peak power added efficiency, and 15.4 dB of power gain across 4 GHz centered around 40 GHz for a supply voltage of 6.5 V. The total chip area including the pads is 0.8 mm × 1.28 mm.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A triple-stacked Class-E mm-wave SiGe HBT power amplifier
A Q-band, single ended, two-stage, triple-stacked, Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. The Class-E amplifier comprises of three series-stacked HBTs with capacitive divider networks at the HBT bases and collectors to ensure proper large signal swing and beyond BVCEO operation at mm-wave frequencies. The measured performance of the fabricated chip show 22.2 dBm maximum output power at 20.8% peak power added efficiency, and 15.4 dB of power gain across 4 GHz centered around 40 GHz for a supply voltage of 6.5 V. The total chip area including the pads is 0.8 mm × 1.28 mm.
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