A semi-empirical large-signal compact model for RF carbon nanotube field-effect transistors

A new compact large-signal model for CNTFETs is presented. The model is oriented towards practical requirements for RF analog circuit design, thus overcoming accuracy and discontinuity issues of existing models. Due to the difficulties of obtaining a compact analytical solution for the Landauer equation as well as for the injected and accumulated charge on the tube, a semi-empirical formulation for the drain current and tube charge has been developed. The complete model is scalable towards multi-tube multi-finger RF CNTFET structures and includes the effects of metallic tubes, contact resistances, parasitic capacitances, self-heating and hysteresis. Experimental verification of the model is shown based on pulsed DC and RF measurements.