120nm SiGe BiCMOS中的92ghz确定性正交振荡器和N-push调制器

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697510

T. D. Gathman, J. Buckwalter

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引用次数: 3

摘要

提出了一种压控行波振荡器，用于确定正交相位的产生。该振荡器拓扑结构包含四个行波增益级，可在传输线环周围提供360度相移。该振荡器的中心频率为92 GHz，调谐范围为1.3 GHz。该结构波振荡器采用120纳米SiGe BiCMOS工艺制造，总占地面积为0.65 × 0.67 mm2，功耗为32mW。

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A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS

A voltage-controlled traveling wave oscillator is proposed for deterministic quadrature phase generation. This oscillator topology contains four traveling-wave gain stages that provide 360o phase shift around transmission line ring. The oscillator has a center frequency of 92 GHz and a tuning range of 1.3 GHz. The constructive-wave oscillator is fabricated in a 120-nm SiGe BiCMOS process and occupies a total area of 0.65 × 0.67 mm2 with a power consumption of 32mW.

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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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