Non-intrusive characterization of active device interactions in high-efficiency power amplifiers

Abstract

In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally quantified for the first time.