{"title":"A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS","authors":"T. D. Gathman, J. Buckwalter","doi":"10.1109/MWSYM.2013.6697510","DOIUrl":null,"url":null,"abstract":"A voltage-controlled traveling wave oscillator is proposed for deterministic quadrature phase generation. This oscillator topology contains four traveling-wave gain stages that provide 360o phase shift around transmission line ring. The oscillator has a center frequency of 92 GHz and a tuning range of 1.3 GHz. The constructive-wave oscillator is fabricated in a 120-nm SiGe BiCMOS process and occupies a total area of 0.65 × 0.67 mm2 with a power consumption of 32mW.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A voltage-controlled traveling wave oscillator is proposed for deterministic quadrature phase generation. This oscillator topology contains four traveling-wave gain stages that provide 360o phase shift around transmission line ring. The oscillator has a center frequency of 92 GHz and a tuning range of 1.3 GHz. The constructive-wave oscillator is fabricated in a 120-nm SiGe BiCMOS process and occupies a total area of 0.65 × 0.67 mm2 with a power consumption of 32mW.