高效功率放大器中有源器件相互作用的非侵入性表征

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697599

R. Hou, M. Spirito, J. Gajadharsing, L. D. de Vreede

{"title":"高效功率放大器中有源器件相互作用的非侵入性表征","authors":"R. Hou, M. Spirito, J. Gajadharsing, L. D. de Vreede","doi":"10.1109/MWSYM.2013.6697599","DOIUrl":null,"url":null,"abstract":"In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally quantified for the first time.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Non-intrusive characterization of active device interactions in high-efficiency power amplifiers\",\"authors\":\"R. Hou, M. Spirito, J. Gajadharsing, L. D. de Vreede\",\"doi\":\"10.1109/MWSYM.2013.6697599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally quantified for the first time.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

在这项工作中，采用非侵入式近场技术来表征2.2 ghz 400 w LDMOS Doherty功率放大器(PA)中的有源器件相互作用。利用该技术，首次实验量化了高效PA中相互作用功率器件在漏极电压、电流、功率、效率和负载阻抗等方面的个体行为。

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Non-intrusive characterization of active device interactions in high-efficiency power amplifiers

In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally quantified for the first time.

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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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