2022 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第7页

Control Strategy of Delta-Connected Solid State Transformer Under Unbalanced Grid Voltage 电网电压不平衡条件下三角连接固态变压器的控制策略

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773558

Ouyang Shaodi

引用次数: 0

In-Situ EV Battery Electrochemical Impedance Spectroscopy with Pack-Level Current Perturbation from a 400V-to-12V Triple-Active-Bridge 400v - 12v三有源电桥包级电流扰动下的原位EV电池电化学阻抗谱

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773622

S. A. Assadi, Z. Gong, Cheng Feng Wang, Joshua Piruzza, James Xu, Diana Jokic, Seif Sarofim, O. Trescases

{"title":"In-Situ EV Battery Electrochemical Impedance Spectroscopy with Pack-Level Current Perturbation from a 400V-to-12V Triple-Active-Bridge","authors":"S. A. Assadi, Z. Gong, Cheng Feng Wang, Joshua Piruzza, James Xu, Diana Jokic, Seif Sarofim, O. Trescases","doi":"10.1109/APEC43599.2022.9773622","DOIUrl":"https://doi.org/10.1109/APEC43599.2022.9773622","url":null,"abstract":"A GaN-based, 4-kW, 400V-to-12V triple-active-bridge dc-dc converter is proposed to impose a variable-frequency sinusoidal perturbation between two EV battery half-packs for Electrochemical Impedance Spectroscopy (EIS). The proposed architecture performs EIS on the high-voltage battery at arbitrarily low test frequencies, requiring only a few cycles of operation and no additional means of energy-storage. This allows for fast, opportunistic, in-situ EIS measurements during EV operation. In-situ impedance measurements can help maximize the EV battery performance with respect to its local environment. Full integration into the existing high-voltage to low-voltage dc-dc EV converter results in a compact and low-cost system. A cell-level voltage-response sensor with automatic dc-offset calibration is implemented with integrated signal processing to measure cell-level voltage responses, thereby accurately capturing cell-to-cell impedance variations in the EV battery. Impedance measurements from a fully custom liquid-cooled 350-V lithium-ion EV battery pack are collected between 0.1 Hz and 200 Hz, from 15° C to 25° C, demonstrating simultaneous in-situ pack-level EIS perturbation and cell-level response measurement.","PeriodicalId":127006,"journal":{"name":"2022 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134165274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A Bidirectional Liquid-Cooled GaN-based AC/DC Flying Capacitor Multi-Level Converter with Integrated Startup and Additively Manufactured Cold-Plate for Electric Vehicle Charging 一种基于液冷氮化镓的交流/直流飞电容多级变换器，集成了启动和增材制造的冷板

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773520

Kelly Fernandez, Rahul K. Iyer, Ting Ge, Jiarui Zou, Derek Chou, Zitao Liao, V. Agarwal, T. Gebrael, N. Miljkovic, R. Pilawa-Podgurski

引用次数: 2

An Integrated Active Gate Driver for Half-bridge SiC MOSFET Power Modules 用于半桥SiC MOSFET功率模块的集成有源栅极驱动器

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773723

Dongwoo Han, Sanghun Kim, Xiaofeng Dong, Zhehui Guo, Hui Li, Jinyeong Moon, Yuan Li, F. Peng

{"title":"An Integrated Active Gate Driver for Half-bridge SiC MOSFET Power Modules","authors":"Dongwoo Han, Sanghun Kim, Xiaofeng Dong, Zhehui Guo, Hui Li, Jinyeong Moon, Yuan Li, F. Peng","doi":"10.1109/APEC43599.2022.9773723","DOIUrl":"https://doi.org/10.1109/APEC43599.2022.9773723","url":null,"abstract":"Silicon carbide (SiC) power devices have excellent breakdown field strength, heat dissipation characteristics, and electron saturation velocity. The SiC-based power semi-conductors can operate at higher switching frequencies with higher voltages and better stability than conventional silicon (Si) devices. Therefore, SiC-based power converters can achieve a high-power density. However, the high switching slew rate of SiC devices accompanied by high-speed switching operations can cause EMI noise problems. Conventional gate drivers cannot effectively control such EMI noise issues, including passive and active gate driver techniques under various system environments. This paper proposes an integrated active gate driver (AGD) to solve the EMI noise issues more effectively and flexibly. The proposed AGD controls the switching slew rate through controllable AGD voltages in real-time according to the system variables that can significantly affect switching characteristics such as the DC BUS voltage, output current, and device temperature. The proposed AGD enables switching devices to control the switching speed accurately under various system operational conditions. The proposed AGD method has been verified through experimental results.","PeriodicalId":127006,"journal":{"name":"2022 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116496090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Implementation of a (Flying) Flying Capacitor Multilevel Converter 一种飞电容多电平变换器的设计与实现

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773635

Samantha Coday, N. Ellis, Nicole Stokowski, R. Pilawa-Podgurski

引用次数: 4

Constant Switch Stress Control of Hybrid Switched Capacitor DC-DC Converters 混合开关电容DC-DC变换器恒定开关应力控制

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773784

Ziyu Xia, J. Stauth

引用次数: 1

Overvoltage Ruggedness and Dynamic Breakdown Voltage of P-Gate GaN HEMTs in High-Frequency Switching up to Megahertz p栅极氮化镓hemt在兆赫以下高频开关中的过电压耐用性和动态击穿电压

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773713

Ruizhe Zhang, Q. Song, Qiang Li, Yuhao Zhang

{"title":"Overvoltage Ruggedness and Dynamic Breakdown Voltage of P-Gate GaN HEMTs in High-Frequency Switching up to Megahertz","authors":"Ruizhe Zhang, Q. Song, Qiang Li, Yuhao Zhang","doi":"10.1109/APEC43599.2022.9773713","DOIUrl":"https://doi.org/10.1109/APEC43599.2022.9773713","url":null,"abstract":"Surge-energy and overvoltage ruggedness of power devices are desired in many power applications. For the GaN high-electron-mobility transistor (HEMT), a device without avalanche capability, its surge-energy and overvoltage ruggedness are both determined by its transient breakdown voltage (BV), which was recently found to be dynamic (i.e., time- and frequency-dependent). However, the switching frequency ($F_{text{SW}}$) in previous overvoltage studies is only a few kilohertz. This work, for the first time, developed a testbed for high-voltage GaN HEMTs enabling continuous overvoltage switching with a Fsw up to 1 MHz. Two types of 600/650-V commercial p-gate GaN HEMTs were tested under 1 MHz overvoltage switching. Both of them showed good ruggedness. The gate injection transistor showed a nearly $F_{text{SW}}$-independent dynamic BV, while the Schottky-type p-gate GaN HEMT showed a decreasing dynamic BV at higher $F_{text{SW}}$, e.g., 270-V lower when Fsw increases from 2 kHz to 1 MHz. These behaviors were explained by the buffer trapping/de-trapping in two types of GaN HEMTs and were validated via TCAD simulation. This work unveils the true overvoltage margin of GaN HEMTs in high-frequency converters.","PeriodicalId":127006,"journal":{"name":"2022 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121494680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface 低寄生和兼容系统接口的高电压SiC功率模块

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773726

Xiaoling Li, Yuxiang Chen, Yuheng Wu, Hao Chen, W. Weber, Adel Nasiri, R. Cuzner, Yue Zhao, A. Mantooth

{"title":"High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface","authors":"Xiaoling Li, Yuxiang Chen, Yuheng Wu, Hao Chen, W. Weber, Adel Nasiri, R. Cuzner, Yue Zhao, A. Mantooth","doi":"10.1109/APEC43599.2022.9773726","DOIUrl":"https://doi.org/10.1109/APEC43599.2022.9773726","url":null,"abstract":"SiC power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are strong candidates to replace Si devices in high voltage applications. Their high breakdown voltage and high switching frequency characteristics enable a drastic enhancement in power density and a significant reduction in complexity of the power electric system. However, proper power module packaging is critical to meet the sufficient insulation distance while simultaneously minimizing parasitics, especially at the module-system interface. This paper addresses the criticality effect of terminal arrangement on 10 kV power module performance. Three kinds of typical module layouts are compared in terms of system interface and parasitics. Thus, a concept of arranging terminals into groups according to the electric potential is proposed to provide a compact module layout with sufficient insulation. Based on this concept, an optimized terminal layout with low commutation loop inductance and attractive module-system interface is recommended for high voltage power module design.","PeriodicalId":127006,"journal":{"name":"2022 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121607901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Analysis of Current Resonances due to Winding Parasitic Capacitances in Medium-Voltage Medium-Frequency Transformers 中压中频变压器绕组寄生电容引起的电流共振分析

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773427

R. Jimenez, G. Oggier, D. P. Fernandez, J. Balda

引用次数: 6

Thermal Design Considerations for GaN-Based Power Adapters 基于gan的电源适配器的热设计注意事项

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2022-03-20 DOI: 10.1109/APEC43599.2022.9773448

R. Samani, Maryam Alizadeh, Ruoyu Hou, Juncheng Lu, Majid Pahlevani

引用次数: 2