2021 25th International Symposium on VLSI Design and Test (VDAT)最新文献

筛选
英文 中文
Radiation Hardened Area-Efficient 10T SRAM Cell for Space Applications 用于空间应用的抗辐射面积高效10T SRAM单元
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9601130
Sayeed Ahmad, N. Alam, M. Hasan
{"title":"Radiation Hardened Area-Efficient 10T SRAM Cell for Space Applications","authors":"Sayeed Ahmad, N. Alam, M. Hasan","doi":"10.1109/VDAT53777.2021.9601130","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601130","url":null,"abstract":"This paper presents a new radiation-hardened 10T SRAM cell with very low area overhead. The HSPICE simulation results carried out using double exponential current source model demonstrate that proposed cell not only fully recovers single-event upsets (SEUs) at any of its sensitive node but also tolerates single-event multi-node upsets (SEMNUs) on two fixed nodes independent of the stored value. The simulation results also confirm that the proposed cell shows improved hold/read static noise margin, smaller write delay, consumes low leakage power at the cost of low write margin compared with most of the other radiation hardened cells. At the same time, it shows only 66% area overhead compared with 6T cell, whereas most of the other radiation hardened cells show more than 95% area overhead. Therefore the proposed cell could be a good choice for aerospace applications that demand high read stability, low leakage and stringent area requirement.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122652643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Area-Time Scalable High Radix Montgomery Modular Multiplier for Large Modulus 大模的区域-时间可伸缩高基数Montgomery模乘法器
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9601001
Venkata Reddy Kolagatla, Vivian Desalphine, D. Selvakumar
{"title":"Area-Time Scalable High Radix Montgomery Modular Multiplier for Large Modulus","authors":"Venkata Reddy Kolagatla, Vivian Desalphine, D. Selvakumar","doi":"10.1109/VDAT53777.2021.9601001","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601001","url":null,"abstract":"Adoption of large modulus and field sizes for RSA and ECC are of the norm for meeting present day’s security requirements and goals. Modular multiplication (MM) is the key computational unit for both and requires large hardware resources (area) and incurs huge latency. Typically, Montgomery Modular Multiplier and Interleaved Modular Multiplier are being adopted for RSA and ECC respectively for designing efficient hardware. Lower Area-time (AT) product is the key design metric to consider both latency (time to compute one MM) and area together as a combined metric. Combinational circuit to compute partial products of a particular modulus for higher radices increases area and critical path, reduces frequency, and latency. Here, the increase in area dominates the reduction in latency with respect to radix, resulting in an increased AT metric for the given modulus. This work presents a table look up technique for the multiplication factors which is used to compute partial products of modulus in MR-MMM (Multi-Radix Montgomery Modular Multiplier). This approach reduces the AT metrics with increasing radices for a given larger modulus enabling an AT scalable hardware and has been proven on Virtex 7 and 6 FPGAs for modulus 256 to 4096 with radices 2 to 212.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121209625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Behaviour of FinFET Inverter’s Effective Capacitances in Low-Voltage Domain 低电压域FinFET逆变器有效电容的行为
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9601052
Sarita Yadav, Nitanshu Chauhan, A. Pandey, R. Pratap, B. Anand
{"title":"Behaviour of FinFET Inverter’s Effective Capacitances in Low-Voltage Domain","authors":"Sarita Yadav, Nitanshu Chauhan, A. Pandey, R. Pratap, B. Anand","doi":"10.1109/VDAT53777.2021.9601052","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601052","url":null,"abstract":"The digital circuit design methodologies used conventionally consider the values of input capacitance (Cin) and parasitic (Cp) capacitance of an inverter to be a fixed, unique value for a given input voltage transition ΔVin. However, it has been reported that the FinFET inverter capacitances show a strong dependence on the circuit parameters, unlike its planar counterparts. This phenomenon was observed and well understood at nominal voltages and was termed as “Extension Transistor Induces Capacitance Shielding” (ETICS). However, while operating at low supply voltages, it is observed that the FinFET capacitances do not follow ETICS and show a different behaviour. Understanding and modelling the behaviour of FinFET device capacitances over a range of supply voltages is crucial when it comes to standard cell design. The behaviour and physical origin of FinFET inverter capacitances at lower supply voltage nodes is explained in this work.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130171414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical Modelling of a CMOS Inter Spike Interval Decoder for Resistive Crossbar based Brain Inspired Computing 基于脑启发计算的电阻交叉棒CMOS尖峰间隔解码器的解析建模
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9600953
Sahibia Kaur Vohra, Sherin A. Thomas, Mahendra Sakare, D. Das
{"title":"Analytical Modelling of a CMOS Inter Spike Interval Decoder for Resistive Crossbar based Brain Inspired Computing","authors":"Sahibia Kaur Vohra, Sherin A. Thomas, Mahendra Sakare, D. Das","doi":"10.1109/VDAT53777.2021.9600953","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600953","url":null,"abstract":"The enhanced performance of neuromorphic computing over conventional Von Neumann computing results in high accuracy, energy and area efficient operations. The energy efficient neuromorphic systems process the information in the form of spikes. Neural coding schemes is the critical aspect of neuromorphic computing as it defines the relationship between the input sensory information and the spike train. Inter-spike-interval (ISI) encoding shows the advantages of high information density and energy efficiency over rate encoding. This paper shows the analytical modelling of Inter Spike Interval (ISI) decoding scheme. This decoding scheme uses a CMOS implemented sample and hold circuit for ISI to voltage transformation. The circuit is implemented in the Cadence Virtuoso environment using CMOS 180nm technology for analytical verification of the simulation results. Also, to demonstrate the robustness of the decoder circuit, Monte Carlo simulation is done for mismatch and process variation.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128565128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of Standard Cells performance for In0.53Ga0.47As FinFET with underlap fin length for High Speed Applications 高速下叠翅In0.53Ga0.47As FinFET标准电池性能分析
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9600972
Jay Pathak, A. Darji
{"title":"Analysis of Standard Cells performance for In0.53Ga0.47As FinFET with underlap fin length for High Speed Applications","authors":"Jay Pathak, A. Darji","doi":"10.1109/VDAT53777.2021.9600972","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600972","url":null,"abstract":"In current CMOS technology for high-speed applications at the sub-14 nm technology node using In0.53Ga0.47As FinFETs is becoming a promising choice because of its exceptional electrical properties. The approach of improving FinFET standard cells utilizing In0.53Ga0.47As nFinFETs is suggested to offer a platform in advanced VLSI digital system flow occupying various standard cells. Gate-source/drain (G-S/D) underlap fin length (Lun) structures are effectively used to reduce the short channel effects for a long time. In this work, the implementation of various standard cells with different Lun in In0.53Ga0.47As nFinFETs to understand its significance. The device reliability was tested in the proposed work by varying the process variation on the height of fin, gate oxide thickness, and channel length offset parameter. Simulation results performed on the different standard cells with Lun= 3 nm method indicate the minimum delay by 42.26%.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122634917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automated Design of Analog Circuits using Machine Learning Techniques 使用机器学习技术的模拟电路自动设计
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9601131
S. Devi, Gourav Tilwankar, R. Zele
{"title":"Automated Design of Analog Circuits using Machine Learning Techniques","authors":"S. Devi, Gourav Tilwankar, R. Zele","doi":"10.1109/VDAT53777.2021.9601131","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601131","url":null,"abstract":"This work presents methodology for an automated design of analog circuits using global Artificial Neural Network (ANN) for an optimised dataset. The optimised dataset is generated using simulation based gm/Id technique, which reduces the dataset size and also the time required for data collection and analysis. Automated analog circuit design is implemented using ANN based supervised learning technique for a common source amplifier and a two stage single-ended opamp. The results obtained are compared with unsupervised (Reinforcement Learning algorithm) and supervised learning technique (Genetic Algorithm based local ANN). The comparison results shows that the proposed gm/Id technique based ANN model gives a better accuracy in terms of score and mean square error (MSE).","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133628962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Formal Verification and Analysis of a Pseudo Random Number Generator 伪随机数生成器的形式化验证与分析
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9601109
D. Selvakumar, J. Mervin, Shashikala Pattanshetty, Vivian Desalphine
{"title":"Formal Verification and Analysis of a Pseudo Random Number Generator","authors":"D. Selvakumar, J. Mervin, Shashikala Pattanshetty, Vivian Desalphine","doi":"10.1109/VDAT53777.2021.9601109","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601109","url":null,"abstract":"Formal verification and analysis of a crypto hardware requires a formal specification, formal proof of equivalence of the specification with the hardware realization. Pseudo Random Number Generator hardware in Verilog RTL or equivalent has an entropy source for random seed, crypto algorithms and processing unit, authenticated access depicting static behavior; and dynamic finite state machines (FSM) for data flow control, fault/error checks and recovery. This paper focusses on a unified, transitive, compositional formal verification and analysis of a FPGA based PRNG with statistical methods, quantitative physical measurements based analysis, symbolic logical equivalence and model checks, and properties verification.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134513501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LightFPGA: Scalable and Automated FPGA Acceleration of LightGBM for Machine Learning Applications LightFPGA:用于机器学习应用的可扩展和自动FPGA加速
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9600900
Alish Kanani, Swar Vaidya, H. Agarwal
{"title":"LightFPGA: Scalable and Automated FPGA Acceleration of LightGBM for Machine Learning Applications","authors":"Alish Kanani, Swar Vaidya, H. Agarwal","doi":"10.1109/VDAT53777.2021.9600900","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600900","url":null,"abstract":"FPGAs are used for high speed machine learning inference, and are proving to be much faster and efficient than CPU. LightGBM is a gradient boosting algorithm that uses decision tree-based learners. In this work, we have developed a library named LightFPGA which extracts details from a pre-trained LightGBM model and generates the corresponding Verilog RTL for FPGA implementation. Since the whole process of code generation is automated, the design is scalable to the LightGBM model trained for any given dataset. Further, the library performs testing and accuracy verification of the implementation by generating testbench. Our results show that using LightFPGA, around 100–400× improvement in latency as compared to CPU can be achieved without any reduction in inference accuracy. Further, it has been observed in the tests performed, that the FPGA implementation of LightGBM offers around 7–8 folds of power reduction, as compared to CPU.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"55 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133390945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An All-CMOS Supply, Temperature and Process Invariant Hybrid Current Reference For Power Efficient IoT Applications 一种全cmos电源,温度和工艺不变混合电流基准,用于高能效物联网应用
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9601082
Soumya Tapse, S. Jandhyala, Adithya Reddy Banti
{"title":"An All-CMOS Supply, Temperature and Process Invariant Hybrid Current Reference For Power Efficient IoT Applications","authors":"Soumya Tapse, S. Jandhyala, Adithya Reddy Banti","doi":"10.1109/VDAT53777.2021.9601082","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601082","url":null,"abstract":"We propose an all-CMOS, supply independent, second-order temperature compensated, process invariant, 10.09 μA current reference circuit working on a 1.8 V power supply. The current reference is built using an adaptive regulated cascode configuration integrated with a Widlar current source. It is implemented in 180 nm UMC MPW RF process and consumes an area of 0.014 mm2. It has a very low line sensitivity of 0.52 %/V and a temperature coefficient of 9.94 ppm/°C over the automotive temperature range of −40°C to 125°C. The proposed current reference is used to build a high quality, power efficient stable ring oscillator circuit working at 377.9 MHz frequency to be used in IoT SoCs. The ring oscillator shows a variation of less than 1.1 % in frequency, with supply voltage over the range 1.5 V to 2 V. The invariance of frequency with supply voltage can be exploited to reduce the power consumption up to 36.93 % in the oscillator circuit.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123197793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Hardware-Software Co-design based Approach for Development of a Distributed DAQ System using FPGA 基于FPGA的分布式数据采集系统的软硬件协同设计方法
2021 25th International Symposium on VLSI Design and Test (VDAT) Pub Date : 2021-09-16 DOI: 10.1109/VDAT53777.2021.9600989
A. Krishnan, M. H. Supriya, N. Sivanandan
{"title":"A Hardware-Software Co-design based Approach for Development of a Distributed DAQ System using FPGA","authors":"A. Krishnan, M. H. Supriya, N. Sivanandan","doi":"10.1109/VDAT53777.2021.9600989","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600989","url":null,"abstract":"Data acquisition systems are required to condition the low-level analog signals from various sensors and to convert them into digital format in order to facilitate downstream processing. Distributed DAQ systems are commonly used in SONAR systems, as a large number of acoustic sensors are used in big platforms and the sensors are physically distributed. The data collected by the distributed DAQ systems are transmitted to a central processing system in real-time where further processing of the data is done. The operating environment of the underwater system can impose severe restrictions on the design of the DAQ system. This paper presents a hardware-software co-design based approach to implementing a resource-efficient FPGA-based distributed DAQ system. Here, the functionality of deterministic data transmission through Ethernet is implemented using RTL modules, and remote health monitoring and configuration control functionalities with TCP/IP stack support are implemented in a soft-processor inside FPGA. To reduce the number of external cables and the FPGA resource utilization, a single Ethernet MAC is shared between processor and RTL modules using AXI switches. Synchronized sampling of sensors is an important requirement in distributed DAQ systems. In this paper, synchronization is achieved by implementing the IEEE1588 precision time protocol in FPGA. By implementing the timestamping of the PTP messages at the RGMII interface, synchronization accuracy close to 300ns was achieved. The implementation was done on Artix7 FPGA from Xilinx with a resource utilization of 36K LUTs and 43K flip-flops. MicroBlaze soft-processor was used with 100 MHz clock and the Synchronization Timer was generated using a 200 MHz clock.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124194730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信