{"title":"Behavior of LDMOS transistors at cryogenic temperature - An experiment based analysis","authors":"Kaushal Kumari Neeraj, N. Mohapatra","doi":"10.1109/VDAT53777.2021.9601012","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601012","url":null,"abstract":"In this work, LDMOS transistors with different drift length and drift doping are characterized at cryogenic temperature. The physics behind the LDMOS transistor behavior at this extreme environmental condition is studied by analyzing device parameters like threshold voltage, carrier mobility and carrier freeze-out. It is shown that the carrier freeze-out in lightly doped drift region occurs at 140K and is responsible for increased drift region resistance. The increase in carrier mobility at lower temperature and carrier freeze-out affects the device characteristics in the linear region. In contrast, the carrier mobility plays a significant role in the saturation region. The probability of impact ionization at different temperatures is also evaluated by considering the electron-phonon interaction in high electric field regions.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126962877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Speed and Power Efficient Multiplexer based Matrix Vector Multiplication for LSTM Network","authors":"Tresa Joseph, T. Bindiya","doi":"10.1109/VDAT53777.2021.9601075","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601075","url":null,"abstract":"This paper proposes a multiplexer based technique for accelerating matrix vector multiplication (MVM) in long short term memory networks. The concept of multiple constant multiplication with separate generation and selection of partial products is used in this design. The most important benefit of the proposed architecture is the reduced implementation complexity in terms of cell area and power efficiency. A truncating method is effectively utilized with a guaranteed reduction in the hardware complexity and power consumption. For inner product computations, the input coefficients are truncated instead of being shifted, which in turn make use of combinational circuits replacing the sequential designs. Also, to improve the overall clock period, a novel design for inner product computations is envisaged, which uses modified multiplexer architecture instead of the existing method. The results show a reduction in the implementation complexity of the MVM with a significant power reduction of 14%.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121981511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuvam Bhateja, Joshua Roy Palathinkal, Tamajeet Mandal, P. Roy, D. Saha
{"title":"Modeling of Thermal Properties of Semiconducting Monolayer MoSe2 and WSe2","authors":"Yuvam Bhateja, Joshua Roy Palathinkal, Tamajeet Mandal, P. Roy, D. Saha","doi":"10.1109/VDAT53777.2021.9600966","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600966","url":null,"abstract":"In this work, first-principles based calculations of thermal properties of monolayer group-6 transition metal dichalcogenides (TMDs) viz. MoSe2 and WSe2 are reported. Owing to the distinctive electronic, optical, and thermal properties, the TMDs have emerged as the suitable candidates for designing next-generation ultra-thin nanodevices. Thus, accurate estimation of heat dissipation across any two-dimensional (2D) atomically thin layer has become crucial. In order to determine thermal transport, we need to assess different intrinsic properties of the 2D materials. A large value of thermal conductivity will ensure better heat transmission across the channel of any high-performance device. Therefore, modeling of different parameters such as mode dependent group velocities, phonon mean free path, etc. has become extremely important.In this study, we adopt a multi-scale modeling approach for determining phonon group velocities of semiconducting MoSe2 and WSe2 crystals. Room temperature air stability of single layer MoSe2 and single layer WSe2 are comparable with that of the other group-6 TMDs. Moreover, the semiconducting 2H phases of both the crystals are dynamically stable. The results reported in this work will be useful for developing closed-form expression of specific heat and thermal conductivity of semiconducting TMDs which are the potential channel materials for sub-10 nm channel length transistors.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116200710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hardware Acceleration of SpMV Multiplier for Deep Learning","authors":"Mahesh Mahadurkar, N. Sivanandan, S. Kala","doi":"10.1109/VDAT53777.2021.9600988","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600988","url":null,"abstract":"Deep Learning techniques are widely adopted in many computer vision tasks and are practically implemented in real-world systems. Deep learning is a promising method for machine learning, where complex functions can be learned directly from the data. Deep learning algorithms provide high accuracy for recognition tasks, while consuming significant resources for computation, compared to the conventional algorithms. State-of-the-art deep learning networks have hundreds of millions of parameters, which makes them less suitable for adoption in devices with constrained memory and power requirements like edge computing devices and mobile devices. Techniques like quantization and inducing sparsity, aims to reduce the total number of computations needed for deep learning inference. For portable embedded applications, general purpose computing hardware like GPPs (General Purpose Processors) and GPUs (Graphic Processing Units) are not preferred as these applications demand high energy efficiency. Field Programmable Gate Arrays (FPGAs) are suitable hardware solutions for edge computing, which gives better power consumption with increased flexibility. In this paper we propose a bandwidth-efficient sparse matrix-vector (SpMV) multiplier architecture for faster deep learning inference. Our architecture also reduces memory-bandwidth bottleneck present in hardware realization of deep learning algorithms. Proposed architecture can use the maximum available memory bandwidth of the computing device, using the multiple MAC (multiply and accumulate) channels. The proposed architecture has been implemented on Kintex-7 FPGA with an operating frequency of 270 MHz and gave significant performance gain when compared with existing implementation.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134000851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Saravanan, J. Jenitha, S. R. Aasish, S. Sanjana
{"title":"Quantum Circuit Design of RECTANGLE Lightweight Cipher","authors":"P. Saravanan, J. Jenitha, S. R. Aasish, S. Sanjana","doi":"10.1109/VDAT53777.2021.9601011","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9601011","url":null,"abstract":"Quantum computers will have a significant impact on the security aspects of many conventional cryptographic algorithms as the quantum circuit implementation of the cryptographic algorithms can be attacked with the help of Grover’s key search algorithm. This work proposes quantum circuit design of RECTANGLE lightweight cipher for 80-bit and 128-bit key variants. All the individual modules of the cipher are designed with minimal quantum resources and finally they are integrated together to build the complete quantum circuit. The quantum circuit synthesis is performed with Toffoli family of quantum gates. The proposed design outperforms the existing design by achieving low-latency. The quantum resources are also estimated to mount the quantum attack by using Grover’s key search algorithm.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124778926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation","authors":"T. R. Varun, R. Nagulapalli, Immanuel Raja","doi":"10.1109/VDAT53777.2021.9600909","DOIUrl":"https://doi.org/10.1109/VDAT53777.2021.9600909","url":null,"abstract":"Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"12 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129299738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Message from Program Chairs","authors":"","doi":"10.1109/vdat53777.2021.9601119","DOIUrl":"https://doi.org/10.1109/vdat53777.2021.9601119","url":null,"abstract":"","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115290044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}