{"title":"一个82μW的混合模式sub-1V带隙基准,温度系数为25 ppm/°C,可同时产生PTAT","authors":"T. R. Varun, R. Nagulapalli, Immanuel Raja","doi":"10.1109/VDAT53777.2021.9600909","DOIUrl":null,"url":null,"abstract":"Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"12 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation\",\"authors\":\"T. R. Varun, R. Nagulapalli, Immanuel Raja\",\"doi\":\"10.1109/VDAT53777.2021.9600909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.\",\"PeriodicalId\":122393,\"journal\":{\"name\":\"2021 25th International Symposium on VLSI Design and Test (VDAT)\",\"volume\":\"12 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 25th International Symposium on VLSI Design and Test (VDAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT53777.2021.9600909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 25th International Symposium on VLSI Design and Test (VDAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT53777.2021.9600909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation
Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.