一个82μW的混合模式sub-1V带隙基准,温度系数为25 ppm/°C,可同时产生PTAT

T. R. Varun, R. Nagulapalli, Immanuel Raja
{"title":"一个82μW的混合模式sub-1V带隙基准,温度系数为25 ppm/°C,可同时产生PTAT","authors":"T. R. Varun, R. Nagulapalli, Immanuel Raja","doi":"10.1109/VDAT53777.2021.9600909","DOIUrl":null,"url":null,"abstract":"Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.","PeriodicalId":122393,"journal":{"name":"2021 25th International Symposium on VLSI Design and Test (VDAT)","volume":"12 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation\",\"authors\":\"T. R. Varun, R. Nagulapalli, Immanuel Raja\",\"doi\":\"10.1109/VDAT53777.2021.9600909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.\",\"PeriodicalId\":122393,\"journal\":{\"name\":\"2021 25th International Symposium on VLSI Design and Test (VDAT)\",\"volume\":\"12 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 25th International Symposium on VLSI Design and Test (VDAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT53777.2021.9600909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 25th International Symposium on VLSI Design and Test (VDAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT53777.2021.9600909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

传统的电压模式带隙参考(BGR)输出限制为1.2V,因此不适合在现代CMOS工艺中进行低于1v的操作。广泛使用的电流模式BGR (Bamba电路)提供低于1v的工作,但以牺牲硅面积和失去PTAT电流产生能力为代价。本文提出了一种混合模式CMOS带隙参考电路,该电路可提供低于1v的带隙参考,具有PTAT能力,占用面积更小。在Bamba电路中,通过添加PTAT电流和CTAT电流的缩放副本来获得零温度系数,而在本技术中,适当添加CTAT电压和PTAT电流。尽可能地利用自偏置技术来最小化系统偏置的温度漂移。采用65nm CMOS技术设计的原型,标称电压为742mV,温度系数为25 ppm/°C,温度系数为- 40°C至125°C。该电路从1V的电源中吸取82w的功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation
Conventional voltage mode Bandgap Reference (BGR) output is limited to 1.2V and hence is unsuitable for sub-1V operation in modern CMOS processes. The widely-used current mode BGR (Bamba circuit) provides sub-1V operation, but at the expense of silicon area and losing the PTAT current generation capability. This paper proposes a mixed-mode CMOS bandgap reference circuit, which provides sub-1V bandgap reference, with the PTAT capability, occupying a lower area. In the Bamba circuit, scaled copies of the PTAT current and CTAT current are added to get the zero-temperature coefficient, whereas in the proposed technique, CTAT voltage and PTAT current are suitably added. Self-bias techniques are utilized wherever possible to minimize the temperature drift of the systematic offset. A prototype designed in 65nm CMOS technology for a nominal voltage of 742mV demonstrates 25 ppm/°C temperature coefficient from −40°C to 125°C. The circuit draws 82uW power from a 1V power supply.
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