一种全cmos电源,温度和工艺不变混合电流基准,用于高能效物联网应用

Soumya Tapse, S. Jandhyala, Adithya Reddy Banti
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引用次数: 0

摘要

我们提出了一个全cmos、电源无关、二阶温度补偿、过程不变、10.09 μA电流基准电路,工作在1.8 V电源上。电流参考是使用集成了Widlar电流源的自适应调节级联码配置构建的。该芯片采用180nm UMC MPW射频工艺,功耗为0.014 mm2。在- 40°C至125°C的汽车温度范围内,它具有非常低的线灵敏度0.52% /V和9.94 ppm/°C的温度系数。提出的电流参考用于构建工作在377.9 MHz频率下的高质量,低功耗稳定的环形振荡器电路,用于物联网soc。环形振荡器显示频率变化小于1.1%,电源电压在1.5 V至2 V范围内。利用频率随电源电压的不变性,可使振荡器电路的功耗降低36.93%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An All-CMOS Supply, Temperature and Process Invariant Hybrid Current Reference For Power Efficient IoT Applications
We propose an all-CMOS, supply independent, second-order temperature compensated, process invariant, 10.09 μA current reference circuit working on a 1.8 V power supply. The current reference is built using an adaptive regulated cascode configuration integrated with a Widlar current source. It is implemented in 180 nm UMC MPW RF process and consumes an area of 0.014 mm2. It has a very low line sensitivity of 0.52 %/V and a temperature coefficient of 9.94 ppm/°C over the automotive temperature range of −40°C to 125°C. The proposed current reference is used to build a high quality, power efficient stable ring oscillator circuit working at 377.9 MHz frequency to be used in IoT SoCs. The ring oscillator shows a variation of less than 1.1 % in frequency, with supply voltage over the range 1.5 V to 2 V. The invariance of frequency with supply voltage can be exploited to reduce the power consumption up to 36.93 % in the oscillator circuit.
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