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International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM最新文献

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Carbon Contamination Free Wafer Cleaning 无碳污染的晶圆清洗
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729462
N. Yonekawa, S. Yasui, S. Ojima, T. Ohmi
{"title":"Carbon Contamination Free Wafer Cleaning","authors":"N. Yonekawa, S. Yasui, S. Ojima, T. Ohmi","doi":"10.1109/ISSM.1994.729462","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729462","url":null,"abstract":"It is difficult not only to detect a small volume of hydrocarbons on Si wafer surface but also to remove the organic impurities by conventional dipping cleaning. Therefore, new analysis method and new cleaning method are required in the semiconductor manufacturing. We have developed the advanced Dynamic-Spin Cleaning System with the ozonized ultrapure water. The experimental results demonstrate that this system is more effective than the conventional dipping cleaning. And then hydrocarbons were confirmed by FT-IR-ATR method. Generally, this method can not detect the very small volume of hydrocarbons. However, this problem is solved by using an ATR-prism made from other materials, like as germanium. Using other materials as ATR-prism can correct exact background spectrum. Therefore, a very small amount of organic impurities can be detected.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129846140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
How To Pursue Equipment Standardization 如何追求设备标准化
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729435
Y. Akasaka, S. Takata
{"title":"How To Pursue Equipment Standardization","authors":"Y. Akasaka, S. Takata","doi":"10.1109/ISSM.1994.729435","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729435","url":null,"abstract":"In proportion to required highly process technology, engineering modification with equipment has been heavily increased at relentless cost level. Due to equipment cost has increased substantially, semiconductor business has not been profitable anymore in Japan. Recovering to the healthy state again, every considerable efforts which will be reducing wastes should be performed by industry's common perception. Equipment standardization would be one of key resolution for reducing, capital investment as global base. This is sure to crack the obstacle for semiconductor industry in near future.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130249509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultraclean Wafer Surfaces For High-Performance ULSI Processing 用于高性能ULSI加工的超净晶圆表面
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729432
T. Ito
{"title":"Ultraclean Wafer Surfaces For High-Performance ULSI Processing","authors":"T. Ito","doi":"10.1109/ISSM.1994.729432","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729432","url":null,"abstract":"For future ULSI production using cluster chambers or multiprocess chambers, dry cleaning techniques are an attractive alternative to wet processing. Photo excited halogen radicals have been found useful for removing trace metals and native oxides from silicon surfaces without any damaging on silicon oxide and/or silicon substrates. Hydrogen termination has been successfully achieved on","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124579397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suggestions Toward Enhancing Collaboration Between University And Industry In Semiconductor Manufacturing Science And Technology Research 加强半导体制造科学技术研究中校企合作的建议
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729412
T. Sugano
{"title":"Suggestions Toward Enhancing Collaboration Between University And Industry In Semiconductor Manufacturing Science And Technology Research","authors":"T. Sugano","doi":"10.1109/ISSM.1994.729412","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729412","url":null,"abstract":"Differences of university-industry collaboration between in Japan and in other countries in semiconductor manufacturing science and technology research are analyzed. Some of the differences are attributed to differences in government policies and regulations, structures of academia and industry, and social recognition of the role of universities in the research. However the importance of the collaboration has been well recognized in Japan, too, and various approaches to enhance the collaboration are pursued. Suggestions for further enhancement of the collaboration are also presented.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"43 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121016982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application Of A Graph Description Method For Structural And Electrical Analysis Of VLSIs 图描述方法在超大规模集成电路结构与电学分析中的应用
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729463
Katsuyuki Ochiai, S. Tazawa, S. Nakajima
{"title":"Application Of A Graph Description Method For Structural And Electrical Analysis Of VLSIs","authors":"Katsuyuki Ochiai, S. Tazawa, S. Nakajima","doi":"10.1109/ISSM.1994.729463","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729463","url":null,"abstract":"A graph description method is proposed to describe layout pattern data. The Graph can express not only pattern positions but also physical attributes of the patterns. Therefore, the data processing time for structural recognition of LSI is less than a method dealing with pattern data of vertex coordinates directly.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124374550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation 用阳极氧化法描述工艺诱导的微缺陷
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729434
S. Fujii, G. Fuse, M. Inoue
{"title":"New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation","authors":"S. Fujii, G. Fuse, M. Inoue","doi":"10.1109/ISSM.1994.729434","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729434","url":null,"abstract":"A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro defects induced by ion implantation and applications using this technique to the failure analysis of MOS device fabrication are presented.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123729897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Agile Flow Control In Semiconductor Manufacturing: Simulation And Animation Demonstration 半导体制造中的敏捷流程控制:仿真与动画演示
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729420
R. Guo, R. Griffin, M. Slama
{"title":"Agile Flow Control In Semiconductor Manufacturing: Simulation And Animation Demonstration","authors":"R. Guo, R. Griffin, M. Slama","doi":"10.1109/ISSM.1994.729420","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729420","url":null,"abstract":"Factory flow control seeks to optimize operational performance by reducing production cycle time, work-in-process, and increasing throughput. We will use an animation-based discrete event simulator to highlight the current operational problems and discuss the possible improvement through the choices of wafer release method, lot size and buffer size. A hypothetical implant operation which consists of seven process steps is used as an example. It will be shown that the optimized pull system has a 10 times improvement in both cycle time and work-in-process inventory without sacrificing throughput compared to the current \"push and balanced\" system.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A TPM-Inspired Factory Throughput Analysis Tool 一个tpm启发的工厂吞吐量分析工具
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729425
J. Konopka
{"title":"A TPM-Inspired Factory Throughput Analysis Tool","authors":"J. Konopka","doi":"10.1109/ISSM.1994.729425","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729425","url":null,"abstract":"The throughput of a factory is constrained by its bottleneck tools. TPM is a methodology that can be used to improve the efficiencies and thus the throughputs of these bottleneck tools. CUBES is a model that helps identify where improvements can be made and how much benefit can be gained from each improvement. If all bottlenecks are analyzed together, factory level throughput improvements can be made.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122142023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Process And Device Innovations Based On Ultra Clean Technology 基于超清洁技术的工艺和设备创新
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729427
T. Ohmi
{"title":"Process And Device Innovations Based On Ultra Clean Technology","authors":"T. Ohmi","doi":"10.1109/ISSM.1994.729427","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729427","url":null,"abstract":"Discusses the process and device innovations that are based on ultra clean technology and applications.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133334144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development Of Dissolved Oxygen Removal System Using Nitrogen Gas Bubbling 氮气鼓泡除氧系统的研制
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729456
Y. Ishihara, S. Yamane, H. Yamazaki, H. Tsuge
{"title":"Development Of Dissolved Oxygen Removal System Using Nitrogen Gas Bubbling","authors":"Y. Ishihara, S. Yamane, H. Yamazaki, H. Tsuge","doi":"10.1109/ISSM.1994.729456","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729456","url":null,"abstract":"It is essentially important to remove the dissolved oxygen (DO) in the ultrapure water for the future ultra-large scale integration (ULSI). We have found the existence of the big driving force for the oxygen diffusion through the material that increases the DO concentration. Based on this finding, we have developed the DO removal system made of a low oxygen permeability material with the nitrogen gas bubbling as a point of use purifier. In this system, the residual DO concentration has reached 0.2 ppb at a gas-liquid ratio of 1.2 m3/m3 that is ten times smaller than the previously reported data. Furthermore, the other impurities in the ultrapure water do not increase after this process.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"49 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131687783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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