用阳极氧化法描述工艺诱导的微缺陷

International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI:10.1109/ISSM.1994.729434

S. Fujii, G. Fuse, M. Inoue

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引用次数: 0

摘要

提出了一种利用阳极氧化和化学去除氧化相结合的方法来观察超细硅中工艺诱导的微缺陷的新方法。在应力场的作用下，缺陷区氧化增强，氧化去除后形成坑状圈定。介绍了离子注入引起的微缺陷的原子力显微镜(AFM)和扫描电镜(SEM)观察及其在MOS器件制造失效分析中的应用。

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New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation

A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro defects induced by ion implantation and applications using this technique to the failure analysis of MOS device fabrication are presented.

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International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM

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