用于高性能ULSI加工的超净晶圆表面

International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI:10.1109/ISSM.1994.729432

T. Ito

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引用次数: 0

摘要

对于未来使用集群室或多工艺室的ULSI生产，干洗技术是湿处理的一个有吸引力的替代方案。光激发卤素自由基已被发现可用于从硅表面去除痕量金属和天然氧化物，而不会对氧化硅和/或硅衬底造成任何损害。氢终止已成功实现

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Ultraclean Wafer Surfaces For High-Performance ULSI Processing

For future ULSI production using cluster chambers or multiprocess chambers, dry cleaning techniques are an attractive alternative to wet processing. Photo excited halogen radicals have been found useful for removing trace metals and native oxides from silicon surfaces without any damaging on silicon oxide and/or silicon substrates. Hydrogen termination has been successfully achieved on

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International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM

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